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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
SI4430BDY-T1-E3 SI4430BDY-T1-E3 Vishay Siliconix MOSFET N-CH 30V 14A 8-SOIC
SI4850EY-T1-GE3 SI4850EY-T1-GE3 Vishay Siliconix MOSFET N-CH 60V 6A 8-SOIC
SI4850EY-T1-GE3 SI4850EY-T1-GE3 Vishay Siliconix MOSFET N-CH 60V 6A 8-SOIC
SI4850EY-T1-GE3 SI4850EY-T1-GE3 Vishay Siliconix MOSFET N-CH 60V 6A 8-SOIC
SI4838BDY-T1-GE3 SI4838BDY-T1-GE3 Vishay Siliconix MOSFET N-CH 12V 34A 8-SOIC
SI4838BDY-T1-GE3 SI4838BDY-T1-GE3 Vishay Siliconix MOSFET N-CH 12V 34A 8-SOIC
SI4838BDY-T1-GE3 SI4838BDY-T1-GE3 Vishay Siliconix MOSFET N-CH 12V 34A 8-SOIC
IRF610PBF IRF610PBF Vishay Siliconix MOSFET N-CH 200V 3.3A TO-220AB
SI4178DY-T1-GE3 SI4178DY-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 12A 8-SOIC
SI4178DY-T1-GE3 SI4178DY-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 12A 8-SOIC
SI4178DY-T1-GE3 SI4178DY-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 12A 8-SOIC
SI7108DN-T1-E3 SI7108DN-T1-E3 Vishay Siliconix MOSFET N-CH 20V 14A 1212-8
SI7108DN-T1-E3 SI7108DN-T1-E3 Vishay Siliconix MOSFET N-CH 20V 14A 1212-8
SI7108DN-T1-E3 SI7108DN-T1-E3 Vishay Siliconix MOSFET N-CH 20V 14A 1212-8
SUD06N10-225L-GE3 SUD06N10-225L-GE3 Vishay Siliconix MOSFET N-CH 100V 6.5A DPAK
SUD06N10-225L-GE3 SUD06N10-225L-GE3 Vishay Siliconix MOSFET N-CH 100V 6.5A DPAK
SUD06N10-225L-GE3 SUD06N10-225L-GE3 Vishay Siliconix MOSFET N-CH 100V 6.5A DPAK
SI4628DY-T1-GE3 SI4628DY-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 38A 8SOIC
SI4628DY-T1-GE3 SI4628DY-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 38A 8SOIC
SI4628DY-T1-GE3 SI4628DY-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 38A 8SOIC
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