中电网首页

产品索引  > 分立半导体产品 > FET - 单

厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
1... 913914915916917918919920921922923 1054
PDF 缩略图 器件名称 制造商 描述
SI7308DN-T1-E3 SI7308DN-T1-E3 Vishay Siliconix MOSFET N-CH 60V 6A 1212-8
SI7308DN-T1-E3 SI7308DN-T1-E3 Vishay Siliconix MOSFET N-CH 60V 6A 1212-8
SI7308DN-T1-E3 SI7308DN-T1-E3 Vishay Siliconix MOSFET N-CH 60V 6A 1212-8
SI7386DP-T1-GE3 SI7386DP-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 12A PPAK SO-8
SI7386DP-T1-GE3 SI7386DP-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 12A PPAK SO-8
SI7386DP-T1-GE3 SI7386DP-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 12A PPAK SO-8
SI4483ADY-T1-GE3 SI4483ADY-T1-GE3 Vishay Siliconix MOSFET P-CH 30V 19.2A 8-SOIC
SI4483ADY-T1-GE3 SI4483ADY-T1-GE3 Vishay Siliconix MOSFET P-CH 30V 19.2A 8-SOIC
SI4483ADY-T1-GE3 SI4483ADY-T1-GE3 Vishay Siliconix MOSFET P-CH 30V 19.2A 8-SOIC
SI4884BDY-T1-E3 SI4884BDY-T1-E3 Vishay Siliconix MOSFET N-CH 30V 16.5A 8-SOIC
SI4884BDY-T1-E3 SI4884BDY-T1-E3 Vishay Siliconix MOSFET N-CH 30V 16.5A 8-SOIC
SI4884BDY-T1-E3 SI4884BDY-T1-E3 Vishay Siliconix MOSFET N-CH 30V 16.5A 8-SOIC
SI5468DC-T1-GE3 SI5468DC-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 6A 1206-8
SI5468DC-T1-GE3 SI5468DC-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 6A 1206-8
SI5468DC-T1-GE3 SI5468DC-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 6A 1206-8
SIR802DP-T1-GE3 SIR802DP-T1-GE3 Vishay Siliconix MOSFET N-CH 20V 30A PPAK SO-8
SIR802DP-T1-GE3 SIR802DP-T1-GE3 Vishay Siliconix MOSFET N-CH 20V 30A PPAK SO-8
SIR802DP-T1-GE3 SIR802DP-T1-GE3 Vishay Siliconix MOSFET N-CH 20V 30A PPAK SO-8
SI4430BDY-T1-E3 SI4430BDY-T1-E3 Vishay Siliconix MOSFET N-CH 30V 14A 8-SOIC
SI4430BDY-T1-E3 SI4430BDY-T1-E3 Vishay Siliconix MOSFET N-CH 30V 14A 8-SOIC
1... 913914915916917918919920921922923 1054