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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
SIRA14DP-T1-GE3 SIRA14DP-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 58A PPAK SO-8
SIRA14DP-T1-GE3 SIRA14DP-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 58A PPAK SO-8
SIRA14DP-T1-GE3 SIRA14DP-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 58A PPAK SO-8
SI3473CDV-T1-GE3 SI3473CDV-T1-GE3 Vishay Siliconix MOSFET P-CH 12V 8A 6-TSOP
SI3473CDV-T1-GE3 SI3473CDV-T1-GE3 Vishay Siliconix MOSFET P-CH 12V 8A 6-TSOP
SI3473CDV-T1-GE3 SI3473CDV-T1-GE3 Vishay Siliconix MOSFET P-CH 12V 8A 6-TSOP
IRLL014TRPBF IRLL014TRPBF Vishay Siliconix MOSFET N-CH 60V 2.7A SOT223
IRLL014TRPBF IRLL014TRPBF Vishay Siliconix MOSFET N-CH 60V 2.7A SOT223
IRLL014TRPBF IRLL014TRPBF Vishay Siliconix MOSFET N-CH 60V 2.7A SOT223
SIA416DJ-T1-GE3 SIA416DJ-T1-GE3 Vishay Siliconix MOSFET N-CH 100V 11.3A SC70-6L
SQ2310ES-T1-GE3 SQ2310ES-T1-GE3 Vishay Siliconix MOSFET N-CH 20V 6A SOT23
SQ2310ES-T1-GE3 SQ2310ES-T1-GE3 Vishay Siliconix MOSFET N-CH 20V 6A SOT23
SQ2310ES-T1-GE3 SQ2310ES-T1-GE3 Vishay Siliconix MOSFET N-CH 20V 6A SOT23
SI4435DDY-T1-E3 SI4435DDY-T1-E3 Vishay Siliconix MOSFET P-CH 30V 11.4A 8SOIC
SI4435DDY-T1-E3 SI4435DDY-T1-E3 Vishay Siliconix MOSFET P-CH 30V 11.4A 8SOIC
SI4435DDY-T1-E3 SI4435DDY-T1-E3 Vishay Siliconix MOSFET P-CH 30V 11.4A 8SOIC
SI9433BDY-T1-GE3 SI9433BDY-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 4.5A 8-SOIC
SI9433BDY-T1-GE3 SI9433BDY-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 4.5A 8-SOIC
SI9433BDY-T1-GE3 SI9433BDY-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 4.5A 8-SOIC
IRLR110TRPBF IRLR110TRPBF Vishay Siliconix MOSFET N-CH 100V 4.3A DPAK
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