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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
SI8499DB-T2-E1 SI8499DB-T2-E1 Vishay Siliconix MOSFET P-CH 20V 16A MICROFOOT
SI8487DB-T1-E1 SI8487DB-T1-E1 Vishay Siliconix MOSFET P-CH 30V MICROFOOT
SI8487DB-T1-E1 SI8487DB-T1-E1 Vishay Siliconix MOSFET P-CH 30V MICROFOOT
SI8487DB-T1-E1 SI8487DB-T1-E1 Vishay Siliconix MOSFET P-CH 30V MICROFOOT
SIA436DJ-T1-GE3 SIA436DJ-T1-GE3 Vishay Siliconix MOSFET N-CH 8V 12A SC70-6L
SIA436DJ-T1-GE3 SIA436DJ-T1-GE3 Vishay Siliconix MOSFET N-CH 8V 12A SC70-6L
SIA436DJ-T1-GE3 SIA436DJ-T1-GE3 Vishay Siliconix MOSFET N-CH 8V 12A SC70-6L
SIA445EDJ-T1-GE3 SIA445EDJ-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 12A SC-70
SIA445EDJ-T1-GE3 SIA445EDJ-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 12A SC-70
SIA445EDJ-T1-GE3 SIA445EDJ-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 12A SC-70
SI4485DY-T1-GE3 SI4485DY-T1-GE3 Vishay Siliconix MOSFET P-CH 30V 6A 8-SOIC
SI4485DY-T1-GE3 SI4485DY-T1-GE3 Vishay Siliconix MOSFET P-CH 30V 6A 8-SOIC
SI4485DY-T1-GE3 SI4485DY-T1-GE3 Vishay Siliconix MOSFET P-CH 30V 6A 8-SOIC
SI4128DY-T1-GE3 SI4128DY-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 10.9A 8-SOIC
SI4128DY-T1-GE3 SI4128DY-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 10.9A 8-SOIC
SI4128DY-T1-GE3 SI4128DY-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 10.9A 8-SOIC
SI5404BDC-T1-E3 SI5404BDC-T1-E3 Vishay Siliconix MOSFET N-CH 20V 5.4A 1206-8
SI5404BDC-T1-E3 SI5404BDC-T1-E3 Vishay Siliconix MOSFET N-CH 20V 5.4A 1206-8
SI5404BDC-T1-E3 SI5404BDC-T1-E3 Vishay Siliconix MOSFET N-CH 20V 5.4A 1206-8
SI2314EDS-T1-E3 SI2314EDS-T1-E3 Vishay Siliconix MOSFET N-CH 20V 3.77A SOT23-3
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