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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
SIA431DJ-T1-GE3 SIA431DJ-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 12A PPAK SC70-6
SIA431DJ-T1-GE3 SIA431DJ-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 12A PPAK SC70-6
SIA431DJ-T1-GE3 SIA431DJ-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 12A PPAK SC70-6
SIS413DN-T1-GE3 SIS413DN-T1-GE3 Vishay Siliconix MOSFET P-CH 30V 18A PPAK 1212-8
SIS413DN-T1-GE3 SIS413DN-T1-GE3 Vishay Siliconix MOSFET P-CH 30V 18A PPAK 1212-8
SIS413DN-T1-GE3 SIS413DN-T1-GE3 Vishay Siliconix MOSFET P-CH 30V 18A PPAK 1212-8
SI1471DH-T1-E3 SI1471DH-T1-E3 Vishay Siliconix MOSFET P-CH 30V 2.7A SC70-6
SI1471DH-T1-E3 SI1471DH-T1-E3 Vishay Siliconix MOSFET P-CH 30V 2.7A SC70-6
SI1471DH-T1-E3 SI1471DH-T1-E3 Vishay Siliconix MOSFET P-CH 30V 2.7A SC70-6
SI3459BDV-T1-GE3 SI3459BDV-T1-GE3 Vishay Siliconix MOSFET P-CH 60V 2.9A 6-TSOP
SI3459BDV-T1-GE3 SI3459BDV-T1-GE3 Vishay Siliconix MOSFET P-CH 60V 2.9A 6-TSOP
SI3459BDV-T1-GE3 SI3459BDV-T1-GE3 Vishay Siliconix MOSFET P-CH 60V 2.9A 6-TSOP
SI2328DS-T1-GE3 SI2328DS-T1-GE3 Vishay Siliconix MOSFET N-CH 100V 1.15A SOT-23
SI2328DS-T1-GE3 SI2328DS-T1-GE3 Vishay Siliconix MOSFET N-CH 100V 1.15A SOT-23
SI2328DS-T1-GE3 SI2328DS-T1-GE3 Vishay Siliconix MOSFET N-CH 100V 1.15A SOT-23
SI5459DU-T1-GE3 SI5459DU-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 8A CHIPFET
SI5459DU-T1-GE3 SI5459DU-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 8A CHIPFET
SI5459DU-T1-GE3 SI5459DU-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 8A CHIPFET
SI8499DB-T2-E1 SI8499DB-T2-E1 Vishay Siliconix MOSFET P-CH 20V 16A MICROFOOT
SI8499DB-T2-E1 SI8499DB-T2-E1 Vishay Siliconix MOSFET P-CH 20V 16A MICROFOOT
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