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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
SIA461DJ-T1-GE3 SIA461DJ-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 12A SC706L
SI1021R-T1-GE3 SI1021R-T1-GE3 Vishay Siliconix MOSFET P-CH 60V 190MA SC-75A
SI1021R-T1-GE3 SI1021R-T1-GE3 Vishay Siliconix MOSFET P-CH 60V 190MA SC-75A
SI1021R-T1-GE3 SI1021R-T1-GE3 Vishay Siliconix MOSFET P-CH 60V 190MA SC-75A
SI3460DDV-T1-GE3 SI3460DDV-T1-GE3 Vishay Siliconix MOSFET N-CH 20V 7.9A 6-TSOP
SI3460DDV-T1-GE3 SI3460DDV-T1-GE3 Vishay Siliconix MOSFET N-CH 20V 7.9A 6-TSOP
SI3460DDV-T1-GE3 SI3460DDV-T1-GE3 Vishay Siliconix MOSFET N-CH 20V 7.9A 6-TSOP
SI2367DS-T1-GE3 SI2367DS-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 3.8A SOT-23
SI2367DS-T1-GE3 SI2367DS-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 3.8A SOT-23
SI2367DS-T1-GE3 SI2367DS-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 3.8A SOT-23
SI8802DB-T2-E1 SI8802DB-T2-E1 Vishay Siliconix MOSFET N-CH 8V MICROFOOT
SI8802DB-T2-E1 SI8802DB-T2-E1 Vishay Siliconix MOSFET N-CH 8V MICROFOOT
SI8802DB-T2-E1 SI8802DB-T2-E1 Vishay Siliconix MOSFET N-CH 8V MICROFOOT
SI2377EDS-T1-GE3 SI2377EDS-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 4.4A SOT-23
SI2377EDS-T1-GE3 SI2377EDS-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 4.4A SOT-23
SI2377EDS-T1-GE3 SI2377EDS-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 4.4A SOT-23
SI2333CDS-T1-GE3 SI2333CDS-T1-GE3 Vishay Siliconix MOSFET P-CH 12V 7.1A SOT-23
SI2333CDS-T1-GE3 SI2333CDS-T1-GE3 Vishay Siliconix MOSFET P-CH 12V 7.1A SOT-23
SI2333CDS-T1-GE3 SI2333CDS-T1-GE3 Vishay Siliconix MOSFET P-CH 12V 7.1A SOT-23
SI8808DB-T2-E1 SI8808DB-T2-E1 Vishay Siliconix MOSFET N-CH 30V MICROFOOT
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