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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
SI1480DH-T1-GE3 SI1480DH-T1-GE3 Vishay Siliconix MOSFET N-CH 100V 2.6A SOT-363
SI1480DH-T1-GE3 SI1480DH-T1-GE3 Vishay Siliconix MOSFET N-CH 100V 2.6A SOT-363
SI1480DH-T1-GE3 SI1480DH-T1-GE3 Vishay Siliconix MOSFET N-CH 100V 2.6A SOT-363
SI3421DV-T1-GE3 SI3421DV-T1-GE3 Vishay Siliconix MOSFET P-CH 30V 8A TSOP-6
SI3421DV-T1-GE3 SI3421DV-T1-GE3 Vishay Siliconix MOSFET P-CH 30V 8A TSOP-6
SI3421DV-T1-GE3 SI3421DV-T1-GE3 Vishay Siliconix MOSFET P-CH 30V 8A TSOP-6
SIB433EDK-T1-GE3 SIB433EDK-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 9A SC-75-6
SIB433EDK-T1-GE3 SIB433EDK-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 9A SC-75-6
SIB433EDK-T1-GE3 SIB433EDK-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 9A SC-75-6
SI2318DS-T1-GE3 SI2318DS-T1-GE3 Vishay Siliconix MOSFET N-CH 40V 3A SOT-23
SI2318DS-T1-GE3 SI2318DS-T1-GE3 Vishay Siliconix MOSFET N-CH 40V 3A SOT-23
SI2318DS-T1-GE3 SI2318DS-T1-GE3 Vishay Siliconix MOSFET N-CH 40V 3A SOT-23
SI2338DS-T1-GE3 SI2338DS-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 6A SOT23
SI2338DS-T1-GE3 SI2338DS-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 6A SOT23
SI2338DS-T1-GE3 SI2338DS-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 6A SOT23
SI2392ADS-T1-GE3 SI2392ADS-T1-GE3 Vishay Siliconix MOSFET N-CH 100V 3.1A SOT-23
SI2392ADS-T1-GE3 SI2392ADS-T1-GE3 Vishay Siliconix MOSFET N-CH 100V 3.1A SOT-23
SI2392ADS-T1-GE3 SI2392ADS-T1-GE3 Vishay Siliconix MOSFET N-CH 100V 3.1A SOT-23
SI3442BDV-T1-E3 SI3442BDV-T1-E3 Vishay Siliconix MOSFET N-CH 20V 3A 6-TSOP
SI3442BDV-T1-E3 SI3442BDV-T1-E3 Vishay Siliconix MOSFET N-CH 20V 3A 6-TSOP
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