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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
SI7431DP-T1-GE3 SI7431DP-T1-GE3 Vishay Siliconix MOSFET P-CH 200V 2.2A PPAK SO-8
SI7431DP-T1-GE3 SI7431DP-T1-GE3 Vishay Siliconix MOSFET P-CH 200V 2.2A PPAK SO-8
SI7431DP-T1-GE3 SI7431DP-T1-GE3 Vishay Siliconix MOSFET P-CH 200V 2.2A PPAK SO-8
SUP90P06-09L-E3 SUP90P06-09L-E3 Vishay Siliconix MOSFET P-CH 60V 90A TO220AB
SUM85N15-19-E3 SUM85N15-19-E3 Vishay Siliconix MOSFET N-CH 150V 85A D2PAK
SUM85N15-19-E3 SUM85N15-19-E3 Vishay Siliconix MOSFET N-CH 150V 85A D2PAK
SUM85N15-19-E3 SUM85N15-19-E3 Vishay Siliconix MOSFET N-CH 150V 85A D2PAK
SIHB33N60E-GE3 SIHB33N60E-GE3 Vishay Siliconix MOSFET N-CH 600V 33A TO-263
IRFPS43N50KPBF IRFPS43N50KPBF Vishay Siliconix MOSFET N-CH 500V 47A SUPER247
SIHG73N60E-GE3 SIHG73N60E-GE3 Vishay Siliconix MOSFET N-CH 600V 73A TO247AC
2N7002K-T1-E3 2N7002K-T1-E3 Vishay Siliconix MOSFET N-CH 60V 300MA SOT-23
2N7002K-T1-E3 2N7002K-T1-E3 Vishay Siliconix MOSFET N-CH 60V 300MA SOT-23
2N7002K-T1-E3 2N7002K-T1-E3 Vishay Siliconix MOSFET N-CH 60V 300MA SOT-23
SI1062X-T1-GE3 SI1062X-T1-GE3 Vishay Siliconix MOSFET N-CH 20V SC-89
SI1062X-T1-GE3 SI1062X-T1-GE3 Vishay Siliconix MOSFET N-CH 20V SC-89
SI1062X-T1-GE3 SI1062X-T1-GE3 Vishay Siliconix MOSFET N-CH 20V SC-89
SI2301CDS-T1-E3 SI2301CDS-T1-E3 Vishay Siliconix MOSFET P-CH 20V 3.1A SOT23-3
SI2301CDS-T1-E3 SI2301CDS-T1-E3 Vishay Siliconix MOSFET P-CH 20V 3.1A SOT23-3
SI2301CDS-T1-E3 SI2301CDS-T1-E3 Vishay Siliconix MOSFET P-CH 20V 3.1A SOT23-3
SI2365EDS-T1-GE3 SI2365EDS-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 5.9A TO-236
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