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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
SI6415DQ-T1-GE3 SI6415DQ-T1-GE3 Vishay Siliconix MOSFET P-CH 30V 6.5A 8-TSSOP
SI6415DQ-T1-GE3 SI6415DQ-T1-GE3 Vishay Siliconix MOSFET P-CH 30V 6.5A 8-TSSOP
SI7615DN-T1-GE3 SI7615DN-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 35A 1212-8
SI7615DN-T1-GE3 SI7615DN-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 35A 1212-8
SI7615DN-T1-GE3 SI7615DN-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 35A 1212-8
SI4136DY-T1-GE3 SI4136DY-T1-GE3 Vishay Siliconix MOSFET N-CH 20V 46A 8-SOIC
SI4136DY-T1-GE3 SI4136DY-T1-GE3 Vishay Siliconix MOSFET N-CH 20V 46A 8-SOIC
SI4136DY-T1-GE3 SI4136DY-T1-GE3 Vishay Siliconix MOSFET N-CH 20V 46A 8-SOIC
IRF540PBF IRF540PBF Vishay Siliconix MOSFET N-CH 100V 28A TO-220AB
SIR876ADP-T1-GE3 SIR876ADP-T1-GE3 Vishay Siliconix MOSFET N-CH 100V 40A PPAK SO-8
SIR876ADP-T1-GE3 SIR876ADP-T1-GE3 Vishay Siliconix MOSFET N-CH 100V 40A PPAK SO-8
SIR876ADP-T1-GE3 SIR876ADP-T1-GE3 Vishay Siliconix MOSFET N-CH 100V 40A PPAK SO-8
SI7852ADP-T1-GE3 SI7852ADP-T1-GE3 Vishay Siliconix MOSFET N-CH 80V 30A PPAK SO-8
SI7852ADP-T1-GE3 SI7852ADP-T1-GE3 Vishay Siliconix MOSFET N-CH 80V 30A PPAK SO-8
SI7852ADP-T1-GE3 SI7852ADP-T1-GE3 Vishay Siliconix MOSFET N-CH 80V 30A PPAK SO-8
SI7858BDP-T1-GE3 SI7858BDP-T1-GE3 Vishay Siliconix MOSFET N-CH 12V 40A PPAK SO-8
SI7858BDP-T1-GE3 SI7858BDP-T1-GE3 Vishay Siliconix MOSFET N-CH 12V 40A PPAK SO-8
SI7858BDP-T1-GE3 SI7858BDP-T1-GE3 Vishay Siliconix MOSFET N-CH 12V 40A PPAK SO-8
SI7113DN-T1-GE3 SI7113DN-T1-GE3 Vishay Siliconix MOSFET P-CH 100V 13.2A 1212-8
SI7113DN-T1-GE3 SI7113DN-T1-GE3 Vishay Siliconix MOSFET P-CH 100V 13.2A 1212-8
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