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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
SI4164DY-T1-GE3 SI4164DY-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 30A 8-SOIC
SI4164DY-T1-GE3 SI4164DY-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 30A 8-SOIC
SI4164DY-T1-GE3 SI4164DY-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 30A 8-SOIC
SI4459ADY-T1-GE3 SI4459ADY-T1-GE3 Vishay Siliconix MOSFET P-CH 30V 29A 8-SOIC
SI4459ADY-T1-GE3 SI4459ADY-T1-GE3 Vishay Siliconix MOSFET P-CH 30V 29A 8-SOIC
SI4459ADY-T1-GE3 SI4459ADY-T1-GE3 Vishay Siliconix MOSFET P-CH 30V 29A 8-SOIC
SI4463BDY-T1-E3 SI4463BDY-T1-E3 Vishay Siliconix MOSFET P-CH 20V 9.8A 8-SOIC
SI4463BDY-T1-E3 SI4463BDY-T1-E3 Vishay Siliconix MOSFET P-CH 20V 9.8A 8-SOIC
SI4463BDY-T1-E3 SI4463BDY-T1-E3 Vishay Siliconix MOSFET P-CH 20V 9.8A 8-SOIC
SUM55P06-19L-E3 SUM55P06-19L-E3 Vishay Siliconix MOSFET P-CH 60V 55A D2PAK
SUM55P06-19L-E3 SUM55P06-19L-E3 Vishay Siliconix MOSFET P-CH 60V 55A D2PAK
SUM55P06-19L-E3 SUM55P06-19L-E3 Vishay Siliconix MOSFET P-CH 60V 55A D2PAK
SI4840BDY-T1-E3 SI4840BDY-T1-E3 Vishay Siliconix MOSFET N-CH 40V 19A 8SOIC
SI4840BDY-T1-E3 SI4840BDY-T1-E3 Vishay Siliconix MOSFET N-CH 40V 19A 8SOIC
SI4840BDY-T1-E3 SI4840BDY-T1-E3 Vishay Siliconix MOSFET N-CH 40V 19A 8SOIC
SI7192DP-T1-GE3 SI7192DP-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 60A PPAK SO-8
SI7192DP-T1-GE3 SI7192DP-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 60A PPAK SO-8
SI7192DP-T1-GE3 SI7192DP-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 60A PPAK SO-8
SI7174DP-T1-GE3 SI7174DP-T1-GE3 Vishay Siliconix MOSFET N-CH 75V 60A PPAK SO-8
SI7174DP-T1-GE3 SI7174DP-T1-GE3 Vishay Siliconix MOSFET N-CH 75V 60A PPAK SO-8
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