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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
SI7812DN-T1-E3 SI7812DN-T1-E3 Vishay Siliconix MOSFET N-CH 75V 16A 1212-8
SI4124DY-T1-GE3 SI4124DY-T1-GE3 Vishay Siliconix MOSFET N-CH 40V 20.5A 8-SOIC
SI4124DY-T1-GE3 SI4124DY-T1-GE3 Vishay Siliconix MOSFET N-CH 40V 20.5A 8-SOIC
SI4124DY-T1-GE3 SI4124DY-T1-GE3 Vishay Siliconix MOSFET N-CH 40V 20.5A 8-SOIC
SI4423DY-T1-E3 SI4423DY-T1-E3 Vishay Siliconix MOSFET P-CH 20V 10A 8-SOIC
SI4423DY-T1-E3 SI4423DY-T1-E3 Vishay Siliconix MOSFET P-CH 20V 10A 8-SOIC
SI4423DY-T1-E3 SI4423DY-T1-E3 Vishay Siliconix MOSFET P-CH 20V 10A 8-SOIC
SI7478DP-T1-E3 SI7478DP-T1-E3 Vishay Siliconix MOSFET N-CH 60V 15A PPAK SO-8
SI7478DP-T1-E3 SI7478DP-T1-E3 Vishay Siliconix MOSFET N-CH 60V 15A PPAK SO-8
SI7478DP-T1-E3 SI7478DP-T1-E3 Vishay Siliconix MOSFET N-CH 60V 15A PPAK SO-8
SI7450DP-T1-E3 SI7450DP-T1-E3 Vishay Siliconix MOSFET N-CH 200V 3.2A PPAK SO-8
SI7450DP-T1-E3 SI7450DP-T1-E3 Vishay Siliconix MOSFET N-CH 200V 3.2A PPAK SO-8
SI7450DP-T1-E3 SI7450DP-T1-E3 Vishay Siliconix MOSFET N-CH 200V 3.2A PPAK SO-8
SI7450DP-T1-GE3 SI7450DP-T1-GE3 Vishay Siliconix MOSFET N-CH 200V 3.2A PPAK SO-8
SI7450DP-T1-GE3 SI7450DP-T1-GE3 Vishay Siliconix MOSFET N-CH 200V 3.2A PPAK SO-8
SI7450DP-T1-GE3 SI7450DP-T1-GE3 Vishay Siliconix MOSFET N-CH 200V 3.2A PPAK SO-8
SIRA00DP-T1-GE3 SIRA00DP-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 100A PPAK SO-8
SIRA00DP-T1-GE3 SIRA00DP-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 100A PPAK SO-8
SIRA00DP-T1-GE3 SIRA00DP-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 100A PPAK SO-8
SI4866DY-T1-E3 SI4866DY-T1-E3 Vishay Siliconix MOSFET N-CH 12V 11A 8-SOIC
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