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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
SI7164DP-T1-GE3 SI7164DP-T1-GE3 Vishay Siliconix MOSFET N-CH 60V 60A PPAK SO-8
SI7164DP-T1-GE3 SI7164DP-T1-GE3 Vishay Siliconix MOSFET N-CH 60V 60A PPAK SO-8
SI3499DV-T1-GE3 SI3499DV-T1-GE3 Vishay Siliconix MOSFET P-CH 8V 5.3A 6-TSOP
SI3499DV-T1-GE3 SI3499DV-T1-GE3 Vishay Siliconix MOSFET P-CH 8V 5.3A 6-TSOP
SI3499DV-T1-GE3 SI3499DV-T1-GE3 Vishay Siliconix MOSFET P-CH 8V 5.3A 6-TSOP
SI2325DS-T1-GE3 SI2325DS-T1-GE3 Vishay Siliconix MOSFET P-CH 150V 0.53A SOT-23
SI2325DS-T1-GE3 SI2325DS-T1-GE3 Vishay Siliconix MOSFET P-CH 150V 0.53A SOT-23
SI2325DS-T1-GE3 SI2325DS-T1-GE3 Vishay Siliconix MOSFET P-CH 150V 0.53A SOT-23
SI7463DP-T1-E3 SI7463DP-T1-E3 Vishay Siliconix MOSFET P-CH 40V 11A PPAK SO-8
SI7463DP-T1-E3 SI7463DP-T1-E3 Vishay Siliconix MOSFET P-CH 40V 11A PPAK SO-8
SI7463DP-T1-E3 SI7463DP-T1-E3 Vishay Siliconix MOSFET P-CH 40V 11A PPAK SO-8
SI4126DY-T1-GE3 SI4126DY-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 39A 8-SOIC
SI4126DY-T1-GE3 SI4126DY-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 39A 8-SOIC
SI4126DY-T1-GE3 SI4126DY-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 39A 8-SOIC
SI7430DP-T1-E3 SI7430DP-T1-E3 Vishay Siliconix MOSFET N-CH 150V 26A PPAK SO-8
SI7430DP-T1-E3 SI7430DP-T1-E3 Vishay Siliconix MOSFET N-CH 150V 26A PPAK SO-8
SI7430DP-T1-E3 SI7430DP-T1-E3 Vishay Siliconix MOSFET N-CH 150V 26A PPAK SO-8
SI7430DP-T1-GE3 SI7430DP-T1-GE3 Vishay Siliconix MOSFET N-CH 150V 26A PPAK SO-8
SI7430DP-T1-GE3 SI7430DP-T1-GE3 Vishay Siliconix MOSFET N-CH 150V 26A PPAK SO-8
SI7430DP-T1-GE3 SI7430DP-T1-GE3 Vishay Siliconix MOSFET N-CH 150V 26A PPAK SO-8
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