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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
SI4378DY-T1-E3 SI4378DY-T1-E3 Vishay Siliconix MOSFET N-CH 20V 19A 8-SOIC
SI4378DY-T1-E3 SI4378DY-T1-E3 Vishay Siliconix MOSFET N-CH 20V 19A 8-SOIC
SI7461DP-T1-E3 SI7461DP-T1-E3 Vishay Siliconix MOSFET P-CH 60V 8.6A PPAK SO-8
SI7461DP-T1-E3 SI7461DP-T1-E3 Vishay Siliconix MOSFET P-CH 60V 8.6A PPAK SO-8
SI7461DP-T1-E3 SI7461DP-T1-E3 Vishay Siliconix MOSFET P-CH 60V 8.6A PPAK SO-8
SI2323CDS-T1-GE3 SI2323CDS-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 6A SOT-23
SI2323CDS-T1-GE3 SI2323CDS-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 6A SOT-23
SI2323CDS-T1-GE3 SI2323CDS-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 6A SOT-23
SI7148DP-T1-E3 SI7148DP-T1-E3 Vishay Siliconix MOSFET N-CH 75V 28A PPAK SO-8
SI7148DP-T1-E3 SI7148DP-T1-E3 Vishay Siliconix MOSFET N-CH 75V 28A PPAK SO-8
SI7148DP-T1-E3 SI7148DP-T1-E3 Vishay Siliconix MOSFET N-CH 75V 28A PPAK SO-8
SI7370DP-T1-E3 SI7370DP-T1-E3 Vishay Siliconix MOSFET N-CH 60V 9.6A PPAK SO-8
SI7370DP-T1-E3 SI7370DP-T1-E3 Vishay Siliconix MOSFET N-CH 60V 9.6A PPAK SO-8
SI7370DP-T1-E3 SI7370DP-T1-E3 Vishay Siliconix MOSFET N-CH 60V 9.6A PPAK SO-8
SI7846DP-T1-E3 SI7846DP-T1-E3 Vishay Siliconix MOSFET N-CH 150V 4A PPAK SO-8
SI7846DP-T1-E3 SI7846DP-T1-E3 Vishay Siliconix MOSFET N-CH 150V 4A PPAK SO-8
SI7846DP-T1-E3 SI7846DP-T1-E3 Vishay Siliconix MOSFET N-CH 150V 4A PPAK SO-8
SI7115DN-T1-GE3 SI7115DN-T1-GE3 Vishay Siliconix MOSFET P-CH 150V 8.9A 1212-8
SI7115DN-T1-GE3 SI7115DN-T1-GE3 Vishay Siliconix MOSFET P-CH 150V 8.9A 1212-8
SI7115DN-T1-GE3 SI7115DN-T1-GE3 Vishay Siliconix MOSFET P-CH 150V 8.9A 1212-8
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