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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
SI4850EY-T1-E3 SI4850EY-T1-E3 Vishay Siliconix MOSFET N-CH 60V 6A 8-SOIC
SI4850EY-T1-E3 SI4850EY-T1-E3 Vishay Siliconix MOSFET N-CH 60V 6A 8-SOIC
SI4850EY-T1-E3 SI4850EY-T1-E3 Vishay Siliconix MOSFET N-CH 60V 6A 8-SOIC
SI7139DP-T1-GE3 SI7139DP-T1-GE3 Vishay Siliconix MOSFET P-CH 30V 40A PPAK SO-8
SI7139DP-T1-GE3 SI7139DP-T1-GE3 Vishay Siliconix MOSFET P-CH 30V 40A PPAK SO-8
SI7139DP-T1-GE3 SI7139DP-T1-GE3 Vishay Siliconix MOSFET P-CH 30V 40A PPAK SO-8
IRFR9020TRPBF IRFR9020TRPBF Vishay Siliconix MOSFET P-CH 50V 9.9A DPAK
IRFR9020TRPBF IRFR9020TRPBF Vishay Siliconix MOSFET P-CH 50V 9.9A DPAK
IRFR9020TRPBF IRFR9020TRPBF Vishay Siliconix MOSFET P-CH 50V 9.9A DPAK
SI7423DN-T1-E3 SI7423DN-T1-E3 Vishay Siliconix MOSFET P-CH 30V 7.4A 1212-8
SI7423DN-T1-E3 SI7423DN-T1-E3 Vishay Siliconix MOSFET P-CH 30V 7.4A 1212-8
SI7423DN-T1-E3 SI7423DN-T1-E3 Vishay Siliconix MOSFET P-CH 30V 7.4A 1212-8
SIS892DN-T1-GE3 SIS892DN-T1-GE3 Vishay Siliconix MOSFET N-CH 100V 30A 1212-8 PPAK
SIS892DN-T1-GE3 SIS892DN-T1-GE3 Vishay Siliconix MOSFET N-CH 100V 30A 1212-8 PPAK
SIS892DN-T1-GE3 SIS892DN-T1-GE3 Vishay Siliconix MOSFET N-CH 100V 30A 1212-8 PPAK
SI2323DS-T1-GE3 SI2323DS-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 3.7A SOT23-3
SI2323DS-T1-GE3 SI2323DS-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 3.7A SOT23-3
SI2323DS-T1-GE3 SI2323DS-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 3.7A SOT23-3
SI4401BDY-T1-E3 SI4401BDY-T1-E3 Vishay Siliconix MOSFET P-CH 40V 8.7A 8-SOIC
SI4401BDY-T1-E3 SI4401BDY-T1-E3 Vishay Siliconix MOSFET P-CH 40V 8.7A 8-SOIC
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