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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
SIR462DP-T1-GE3 SIR462DP-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 30A PPAK SO-8
IRFR224TRPBF IRFR224TRPBF Vishay Siliconix MOSFET N-CH 250V 3.8A DPAK
IRFR224TRPBF IRFR224TRPBF Vishay Siliconix MOSFET N-CH 250V 3.8A DPAK
IRFR224TRPBF IRFR224TRPBF Vishay Siliconix MOSFET N-CH 250V 3.8A DPAK
SI7386DP-T1-E3 SI7386DP-T1-E3 Vishay Siliconix MOSFET N-CH 30V 12A PPAK SO-8
SI7386DP-T1-E3 SI7386DP-T1-E3 Vishay Siliconix MOSFET N-CH 30V 12A PPAK SO-8
SI7386DP-T1-E3 SI7386DP-T1-E3 Vishay Siliconix MOSFET N-CH 30V 12A PPAK SO-8
SIR496DP-T1-GE3 SIR496DP-T1-GE3 Vishay Siliconix MOSFET N-CH 20V 35A PPAK SO-8
SIR496DP-T1-GE3 SIR496DP-T1-GE3 Vishay Siliconix MOSFET N-CH 20V 35A PPAK SO-8
SIR496DP-T1-GE3 SIR496DP-T1-GE3 Vishay Siliconix MOSFET N-CH 20V 35A PPAK SO-8
SI4427BDY-T1-E3 SI4427BDY-T1-E3 Vishay Siliconix MOSFET P-CH 30V 9.7A 8-SOIC
SI4427BDY-T1-E3 SI4427BDY-T1-E3 Vishay Siliconix MOSFET P-CH 30V 9.7A 8-SOIC
SI4427BDY-T1-E3 SI4427BDY-T1-E3 Vishay Siliconix MOSFET P-CH 30V 9.7A 8-SOIC
SI3440DV-T1-GE3 SI3440DV-T1-GE3 Vishay Siliconix MOSFET N-CH 150V 1.2A 6-TSOP
SI3440DV-T1-GE3 SI3440DV-T1-GE3 Vishay Siliconix MOSFET N-CH 150V 1.2A 6-TSOP
SI3440DV-T1-GE3 SI3440DV-T1-GE3 Vishay Siliconix MOSFET N-CH 150V 1.2A 6-TSOP
IRFR9310TRPBF IRFR9310TRPBF Vishay Siliconix MOSFET P-CH 400V 1.8A DPAK
IRFR9310TRPBF IRFR9310TRPBF Vishay Siliconix MOSFET P-CH 400V 1.8A DPAK
IRFR9310TRPBF IRFR9310TRPBF Vishay Siliconix MOSFET P-CH 400V 1.8A DPAK
SI7414DN-T1-E3 SI7414DN-T1-E3 Vishay Siliconix MOSFET N-CH 60V 5.6A 1212-8
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