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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
SI2337DS-T1-E3 SI2337DS-T1-E3 Vishay Siliconix MOSFET P-CH 80V 2.2A SOT23-3
SI2337DS-T1-E3 SI2337DS-T1-E3 Vishay Siliconix MOSFET P-CH 80V 2.2A SOT23-3
SI2337DS-T1-E3 SI2337DS-T1-E3 Vishay Siliconix MOSFET P-CH 80V 2.2A SOT23-3
SIS407DN-T1-GE3 SIS407DN-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 25A 1212-8 PPAK
SIS407DN-T1-GE3 SIS407DN-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 25A 1212-8 PPAK
SIS407DN-T1-GE3 SIS407DN-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 25A 1212-8 PPAK
SI3473DV-T1-E3 SI3473DV-T1-E3 Vishay Siliconix MOSFET P-CH 12V 5.9A 6-TSOP
SI3473DV-T1-E3 SI3473DV-T1-E3 Vishay Siliconix MOSFET P-CH 12V 5.9A 6-TSOP
SI3473DV-T1-E3 SI3473DV-T1-E3 Vishay Siliconix MOSFET P-CH 12V 5.9A 6-TSOP
SIA421DJ-T1-GE3 SIA421DJ-T1-GE3 Vishay Siliconix MOSFET P-CH 30V 12A SC70-6
SIA421DJ-T1-GE3 SIA421DJ-T1-GE3 Vishay Siliconix MOSFET P-CH 30V 12A SC70-6
SIA421DJ-T1-GE3 SIA421DJ-T1-GE3 Vishay Siliconix MOSFET P-CH 30V 12A SC70-6
SI4464DY-T1-E3 SI4464DY-T1-E3 Vishay Siliconix MOSFET N-CH 200V 1.7A 8-SOIC
SI4464DY-T1-E3 SI4464DY-T1-E3 Vishay Siliconix MOSFET N-CH 200V 1.7A 8-SOIC
SI4464DY-T1-E3 SI4464DY-T1-E3 Vishay Siliconix MOSFET N-CH 200V 1.7A 8-SOIC
SI8429DB-T1-E1 SI8429DB-T1-E1 Vishay Siliconix MOSFET P-CH 8V 11.7A 2X2 4-MFP
SI8429DB-T1-E1 SI8429DB-T1-E1 Vishay Siliconix MOSFET P-CH 8V 11.7A 2X2 4-MFP
SI8429DB-T1-E1 SI8429DB-T1-E1 Vishay Siliconix MOSFET P-CH 8V 11.7A 2X2 4-MFP
SIR426DP-T1-GE3 SIR426DP-T1-GE3 Vishay Siliconix MOSFET N-CH 40V 30A PPAK SO-8
SIR426DP-T1-GE3 SIR426DP-T1-GE3 Vishay Siliconix MOSFET N-CH 40V 30A PPAK SO-8
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