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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
SI9407BDY-T1-GE3 SI9407BDY-T1-GE3 Vishay Siliconix MOSFET P-CH 60V 4.7A 8-SOIC
SI9407BDY-T1-GE3 SI9407BDY-T1-GE3 Vishay Siliconix MOSFET P-CH 60V 4.7A 8-SOIC
SI9407BDY-T1-GE3 SI9407BDY-T1-GE3 Vishay Siliconix MOSFET P-CH 60V 4.7A 8-SOIC
SUD09P10-195-GE3 SUD09P10-195-GE3 Vishay Siliconix MOSFET P-CH 100V 8.8A DPAK
SUD09P10-195-GE3 SUD09P10-195-GE3 Vishay Siliconix MOSFET P-CH 100V 8.8A DPAK
SUD09P10-195-GE3 SUD09P10-195-GE3 Vishay Siliconix MOSFET P-CH 100V 8.8A DPAK
SQ3427EEV-T1-GE3 SQ3427EEV-T1-GE3 Vishay Siliconix MOSFET P-CH 60V 5.5A 6TSOP
SQ3427EEV-T1-GE3 SQ3427EEV-T1-GE3 Vishay Siliconix MOSFET P-CH 60V 5.5A 6TSOP
SQ3427EEV-T1-GE3 SQ3427EEV-T1-GE3 Vishay Siliconix MOSFET P-CH 60V 5.5A 6TSOP
SQ3419EEV-T1-GE3 SQ3419EEV-T1-GE3 Vishay Siliconix MOSFET P-CH 40V 7.4A 6TSOP
SQ3419EEV-T1-GE3 SQ3419EEV-T1-GE3 Vishay Siliconix MOSFET P-CH 40V 7.4A 6TSOP
SQ3419EEV-T1-GE3 SQ3419EEV-T1-GE3 Vishay Siliconix MOSFET P-CH 40V 7.4A 6TSOP
SI7617DN-T1-GE3 SI7617DN-T1-GE3 Vishay Siliconix MOSFET P-CH 30V 35A 1212-8 PPAK
SI7617DN-T1-GE3 SI7617DN-T1-GE3 Vishay Siliconix MOSFET P-CH 30V 35A 1212-8 PPAK
SI7617DN-T1-GE3 SI7617DN-T1-GE3 Vishay Siliconix MOSFET P-CH 30V 35A 1212-8 PPAK
SIA415DJ-T1-GE3 SIA415DJ-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 12A SC70-6
SIA415DJ-T1-GE3 SIA415DJ-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 12A SC70-6
SIA415DJ-T1-GE3 SIA415DJ-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 12A SC70-6
SI3483CDV-T1-GE3 SI3483CDV-T1-GE3 Vishay Siliconix MOSFET P-CH 30V 8A 6-TSOP
SI3483CDV-T1-GE3 SI3483CDV-T1-GE3 Vishay Siliconix MOSFET P-CH 30V 8A 6-TSOP
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