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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
SI4436DY-T1-E3 SI4436DY-T1-E3 Vishay Siliconix MOSFET N-CH 60V 8A 8-SOIC
SI4436DY-T1-E3 SI4436DY-T1-E3 Vishay Siliconix MOSFET N-CH 60V 8A 8-SOIC
SIS410DN-T1-GE3 SIS410DN-T1-GE3 Vishay Siliconix MOSFET N-CH 20V 35A PPAK 1212-8
SIS410DN-T1-GE3 SIS410DN-T1-GE3 Vishay Siliconix MOSFET N-CH 20V 35A PPAK 1212-8
SIS410DN-T1-GE3 SIS410DN-T1-GE3 Vishay Siliconix MOSFET N-CH 20V 35A PPAK 1212-8
SI4425BDY-T1-E3 SI4425BDY-T1-E3 Vishay Siliconix MOSFET P-CH 30V 8.8A 8-SOIC
SI4425BDY-T1-E3 SI4425BDY-T1-E3 Vishay Siliconix MOSFET P-CH 30V 8.8A 8-SOIC
SI4425BDY-T1-E3 SI4425BDY-T1-E3 Vishay Siliconix MOSFET P-CH 30V 8.8A 8-SOIC
SUD23N06-31-GE3 SUD23N06-31-GE3 Vishay Siliconix MOSFET N-CH 60V 21.4A TO-252
SUD23N06-31-GE3 SUD23N06-31-GE3 Vishay Siliconix MOSFET N-CH 60V 21.4A TO-252
SUD23N06-31-GE3 SUD23N06-31-GE3 Vishay Siliconix MOSFET N-CH 60V 21.4A TO-252
SI7123DN-T1-GE3 SI7123DN-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 10.2A 1212-8
SI7123DN-T1-GE3 SI7123DN-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 10.2A 1212-8
SI7123DN-T1-GE3 SI7123DN-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 10.2A 1212-8
SI7129DN-T1-GE3 SI7129DN-T1-GE3 Vishay Siliconix MOSFET P-CH 30V 35A 1212-8
SI7129DN-T1-GE3 SI7129DN-T1-GE3 Vishay Siliconix MOSFET P-CH 30V 35A 1212-8
SI7129DN-T1-GE3 SI7129DN-T1-GE3 Vishay Siliconix MOSFET P-CH 30V 35A 1212-8
SI7119DN-T1-GE3 SI7119DN-T1-GE3 Vishay Siliconix MOSFET P-CH 200V 3.8A 1212-8
SI7119DN-T1-GE3 SI7119DN-T1-GE3 Vishay Siliconix MOSFET P-CH 200V 3.8A 1212-8
SI7119DN-T1-GE3 SI7119DN-T1-GE3 Vishay Siliconix MOSFET P-CH 200V 3.8A 1212-8
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