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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
SI3483CDV-T1-GE3 SI3483CDV-T1-GE3 Vishay Siliconix MOSFET P-CH 30V 8A 6-TSOP
SUD50N04-8M8P-4GE3 SUD50N04-8M8P-4GE3 Vishay Siliconix MOSFET N-CH 40V 14A TO-252
SUD50N04-8M8P-4GE3 SUD50N04-8M8P-4GE3 Vishay Siliconix MOSFET N-CH 40V 14A TO-252
SUD50N04-8M8P-4GE3 SUD50N04-8M8P-4GE3 Vishay Siliconix MOSFET N-CH 40V 14A TO-252
IRFRC20TRPBF IRFRC20TRPBF Vishay Siliconix MOSFET N-CH 600V 2A DPAK
IRFRC20TRPBF IRFRC20TRPBF Vishay Siliconix MOSFET N-CH 600V 2A DPAK
IRFRC20TRPBF IRFRC20TRPBF Vishay Siliconix MOSFET N-CH 600V 2A DPAK
IRFR320TRPBF IRFR320TRPBF Vishay Siliconix MOSFET N-CH 400V 3.1A DPAK
IRFR320TRPBF IRFR320TRPBF Vishay Siliconix MOSFET N-CH 400V 3.1A DPAK
IRFR320TRPBF IRFR320TRPBF Vishay Siliconix MOSFET N-CH 400V 3.1A DPAK
IRFR420TRPBF IRFR420TRPBF Vishay Siliconix MOSFET N-CH 500V 2.4A DPAK
IRFR420TRPBF IRFR420TRPBF Vishay Siliconix MOSFET N-CH 500V 2.4A DPAK
IRFR420TRPBF IRFR420TRPBF Vishay Siliconix MOSFET N-CH 500V 2.4A DPAK
SIA414DJ-T1-GE3 SIA414DJ-T1-GE3 Vishay Siliconix MOSFET N-CH 8V 12A SC70-6
SIA414DJ-T1-GE3 SIA414DJ-T1-GE3 Vishay Siliconix MOSFET N-CH 8V 12A SC70-6
SIA414DJ-T1-GE3 SIA414DJ-T1-GE3 Vishay Siliconix MOSFET N-CH 8V 12A SC70-6
SIA456DJ-T1-GE3 SIA456DJ-T1-GE3 Vishay Siliconix MOSFET N-CH 200V 2.6A SC70-6
SIA456DJ-T1-GE3 SIA456DJ-T1-GE3 Vishay Siliconix MOSFET N-CH 200V 2.6A SC70-6
SIA456DJ-T1-GE3 SIA456DJ-T1-GE3 Vishay Siliconix MOSFET N-CH 200V 2.6A SC70-6
SI4436DY-T1-E3 SI4436DY-T1-E3 Vishay Siliconix MOSFET N-CH 60V 8A 8-SOIC
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