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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
SI9435BDY-T1-E3 SI9435BDY-T1-E3 Vishay Siliconix MOSFET P-CH 30V 4.1A 8-SOIC
SIB452DK-T1-GE3 SIB452DK-T1-GE3 Vishay Siliconix MOSFET N-CH 190V 1.5A SC75-6
SIB452DK-T1-GE3 SIB452DK-T1-GE3 Vishay Siliconix MOSFET N-CH 190V 1.5A SC75-6
SIB452DK-T1-GE3 SIB452DK-T1-GE3 Vishay Siliconix MOSFET N-CH 190V 1.5A SC75-6
SI4487DY-T1-GE3 SI4487DY-T1-GE3 Vishay Siliconix MOSFET P-CH 30V 11.6A 8-SOIC
SI4487DY-T1-GE3 SI4487DY-T1-GE3 Vishay Siliconix MOSFET P-CH 30V 11.6A 8-SOIC
SI4487DY-T1-GE3 SI4487DY-T1-GE3 Vishay Siliconix MOSFET P-CH 30V 11.6A 8-SOIC
TN2404K-T1-E3 TN2404K-T1-E3 Vishay Siliconix MOSFET N-CH 240V 200MA SOT23-3
TN2404K-T1-E3 TN2404K-T1-E3 Vishay Siliconix MOSFET N-CH 240V 200MA SOT23-3
TN2404K-T1-E3 TN2404K-T1-E3 Vishay Siliconix MOSFET N-CH 240V 200MA SOT23-3
IRFR110TRPBF IRFR110TRPBF Vishay Siliconix MOSFET N-CH 100V 4.3A DPAK
IRFR110TRPBF IRFR110TRPBF Vishay Siliconix MOSFET N-CH 100V 4.3A DPAK
IRFR110TRPBF IRFR110TRPBF Vishay Siliconix MOSFET N-CH 100V 4.3A DPAK
SI3410DV-T1-GE3 SI3410DV-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 8A 6-TSOP
SI3410DV-T1-GE3 SI3410DV-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 8A 6-TSOP
SI3410DV-T1-GE3 SI3410DV-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 8A 6-TSOP
SI7619DN-T1-GE3 SI7619DN-T1-GE3 Vishay Siliconix MOSFET P-CH 30V 24A 1212-8 PPAK
SI7619DN-T1-GE3 SI7619DN-T1-GE3 Vishay Siliconix MOSFET P-CH 30V 24A 1212-8 PPAK
SI7619DN-T1-GE3 SI7619DN-T1-GE3 Vishay Siliconix MOSFET P-CH 30V 24A 1212-8 PPAK
SIR836DP-T1-GE3 SIR836DP-T1-GE3 Vishay Siliconix MOSFET N-CH 40V 21A PPAK SO-8
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