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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
SI2304DDS-T1-GE3 SI2304DDS-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 3.3A SOT23
SI2304DDS-T1-GE3 SI2304DDS-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 3.3A SOT23
SI2304DDS-T1-GE3 SI2304DDS-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 3.3A SOT23
SI5410DU-T1-GE3 SI5410DU-T1-GE3 Vishay Siliconix MOSFET N-CH 40V 12A PPAK CHIPFET
SI5410DU-T1-GE3 SI5410DU-T1-GE3 Vishay Siliconix MOSFET N-CH 40V 12A PPAK CHIPFET
SI5410DU-T1-GE3 SI5410DU-T1-GE3 Vishay Siliconix MOSFET N-CH 40V 12A PPAK CHIPFET
SI5486DU-T1-GE3 SI5486DU-T1-GE3 Vishay Siliconix MOSFET N-CH 20V 12A PPAK CHIPFET
SI5486DU-T1-GE3 SI5486DU-T1-GE3 Vishay Siliconix MOSFET N-CH 20V 12A PPAK CHIPFET
SI5486DU-T1-GE3 SI5486DU-T1-GE3 Vishay Siliconix MOSFET N-CH 20V 12A PPAK CHIPFET
SIR466DP-T1-GE3 SIR466DP-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 40A PPAK SO-8
SIR466DP-T1-GE3 SIR466DP-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 40A PPAK SO-8
SIR466DP-T1-GE3 SIR466DP-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 40A PPAK SO-8
SIR422DP-T1-GE3 SIR422DP-T1-GE3 Vishay Siliconix MOSFET N-CH 40V 40A PPAK SO-8
SIR422DP-T1-GE3 SIR422DP-T1-GE3 Vishay Siliconix MOSFET N-CH 40V 40A PPAK SO-8
SIR422DP-T1-GE3 SIR422DP-T1-GE3 Vishay Siliconix MOSFET N-CH 40V 40A PPAK SO-8
SIS862DN-T1-GE3 SIS862DN-T1-GE3 Vishay Siliconix MOSFET N-CH 60V 40A 1212
SIS862DN-T1-GE3 SIS862DN-T1-GE3 Vishay Siliconix MOSFET N-CH 60V 40A 1212
SIS862DN-T1-GE3 SIS862DN-T1-GE3 Vishay Siliconix MOSFET N-CH 60V 40A 1212
SIR462DP-T1-GE3 SIR462DP-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 30A PPAK SO-8
SIR462DP-T1-GE3 SIR462DP-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 30A PPAK SO-8
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