中电网首页

产品索引  > 分立半导体产品 > FET - 单

厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
1... 874875876877878879880881882883884 1054
PDF 缩略图 器件名称 制造商 描述
SI7414DN-T1-E3 SI7414DN-T1-E3 Vishay Siliconix MOSFET N-CH 60V 5.6A 1212-8
SI7414DN-T1-E3 SI7414DN-T1-E3 Vishay Siliconix MOSFET N-CH 60V 5.6A 1212-8
SI7820DN-T1-E3 SI7820DN-T1-E3 Vishay Siliconix MOSFET N-CH 200V 1.7A 1212-8
SI7820DN-T1-E3 SI7820DN-T1-E3 Vishay Siliconix MOSFET N-CH 200V 1.7A 1212-8
SI7820DN-T1-E3 SI7820DN-T1-E3 Vishay Siliconix MOSFET N-CH 200V 1.7A 1212-8
SI7414DN-T1-GE3 SI7414DN-T1-GE3 Vishay Siliconix MOSFET N-CH 60V 5.6A 1212-8
SI7414DN-T1-GE3 SI7414DN-T1-GE3 Vishay Siliconix MOSFET N-CH 60V 5.6A 1212-8
SI7414DN-T1-GE3 SI7414DN-T1-GE3 Vishay Siliconix MOSFET N-CH 60V 5.6A 1212-8
SI7465DP-T1-E3 SI7465DP-T1-E3 Vishay Siliconix MOSFET P-CH 60V 3.2A PPAK SO-8
SI7465DP-T1-E3 SI7465DP-T1-E3 Vishay Siliconix MOSFET P-CH 60V 3.2A PPAK SO-8
SI7465DP-T1-E3 SI7465DP-T1-E3 Vishay Siliconix MOSFET P-CH 60V 3.2A PPAK SO-8
SIR468DP-T1-GE3 SIR468DP-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 40A PPAK SO-8
SIR468DP-T1-GE3 SIR468DP-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 40A PPAK SO-8
SIR468DP-T1-GE3 SIR468DP-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 40A PPAK SO-8
SI5476DU-T1-GE3 SI5476DU-T1-GE3 Vishay Siliconix MOSFET N-CH 60V 12A PPAK CHIPFET
SI5476DU-T1-GE3 SI5476DU-T1-GE3 Vishay Siliconix MOSFET N-CH 60V 12A PPAK CHIPFET
SI5476DU-T1-GE3 SI5476DU-T1-GE3 Vishay Siliconix MOSFET N-CH 60V 12A PPAK CHIPFET
SI7121DN-T1-GE3 SI7121DN-T1-GE3 Vishay Siliconix MOSFET P-CH 30V 16A 1212-8
SI7121DN-T1-GE3 SI7121DN-T1-GE3 Vishay Siliconix MOSFET P-CH 30V 16A 1212-8
SI7121DN-T1-GE3 SI7121DN-T1-GE3 Vishay Siliconix MOSFET P-CH 30V 16A 1212-8
1... 874875876877878879880881882883884 1054