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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
SI7465DP-T1-GE3 SI7465DP-T1-GE3 Vishay Siliconix MOSFET P-CH 60V 3.2A PPAK SO-8
SI7465DP-T1-GE3 SI7465DP-T1-GE3 Vishay Siliconix MOSFET P-CH 60V 3.2A PPAK SO-8
SI7465DP-T1-GE3 SI7465DP-T1-GE3 Vishay Siliconix MOSFET P-CH 60V 3.2A PPAK SO-8
SIS468DN-T1-GE3 SIS468DN-T1-GE3 Vishay Siliconix MOSFET N-CH 80V 30A 1212-8
SIS468DN-T1-GE3 SIS468DN-T1-GE3 Vishay Siliconix MOSFET N-CH 80V 30A 1212-8
SIS468DN-T1-GE3 SIS468DN-T1-GE3 Vishay Siliconix MOSFET N-CH 80V 30A 1212-8
SI7415DN-T1-GE3 SI7415DN-T1-GE3 Vishay Siliconix MOSFET P-CH 60V 3.6A 1212-8
SI7415DN-T1-GE3 SI7415DN-T1-GE3 Vishay Siliconix MOSFET P-CH 60V 3.6A 1212-8
SI7415DN-T1-GE3 SI7415DN-T1-GE3 Vishay Siliconix MOSFET P-CH 60V 3.6A 1212-8
SI4848DY-T1-E3 SI4848DY-T1-E3 Vishay Siliconix MOSFET N-CH 150V 2.7A 8-SOIC
SI4848DY-T1-E3 SI4848DY-T1-E3 Vishay Siliconix MOSFET N-CH 150V 2.7A 8-SOIC
SI4848DY-T1-E3 SI4848DY-T1-E3 Vishay Siliconix MOSFET N-CH 150V 2.7A 8-SOIC
SI7322DN-T1-GE3 SI7322DN-T1-GE3 Vishay Siliconix MOSFET N-CH 100V 18A 1212-8
SI7322DN-T1-GE3 SI7322DN-T1-GE3 Vishay Siliconix MOSFET N-CH 100V 18A 1212-8
SI7322DN-T1-GE3 SI7322DN-T1-GE3 Vishay Siliconix MOSFET N-CH 100V 18A 1212-8
SI2302CDS-T1-GE3 SI2302CDS-T1-GE3 Vishay Siliconix MOSFET N-CH 20V 2.6A SOT23-3
SI2302CDS-T1-GE3 SI2302CDS-T1-GE3 Vishay Siliconix MOSFET N-CH 20V 2.6A SOT23-3
SI2302CDS-T1-GE3 SI2302CDS-T1-GE3 Vishay Siliconix MOSFET N-CH 20V 2.6A SOT23-3
SIR416DP-T1-GE3 SIR416DP-T1-GE3 Vishay Siliconix MOSFET N-CH 40V 50A PPAK SO-8
SIR416DP-T1-GE3 SIR416DP-T1-GE3 Vishay Siliconix MOSFET N-CH 40V 50A PPAK SO-8
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