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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
SI7108DN-T1-GE3 SI7108DN-T1-GE3 Vishay Siliconix MOSFET N-CH 20V 14A 1212-8
SI7108DN-T1-GE3 SI7108DN-T1-GE3 Vishay Siliconix MOSFET N-CH 20V 14A 1212-8
SI7454DP-T1-E3 SI7454DP-T1-E3 Vishay Siliconix MOSFET N-CH 100V 5A PPAK SO-8
SI7454DP-T1-E3 SI7454DP-T1-E3 Vishay Siliconix MOSFET N-CH 100V 5A PPAK SO-8
SI7454DP-T1-E3 SI7454DP-T1-E3 Vishay Siliconix MOSFET N-CH 100V 5A PPAK SO-8
SI7850DP-T1-GE3 SI7850DP-T1-GE3 Vishay Siliconix MOSFET N-CH 60V 6.2A PPAK SO-8
SI7850DP-T1-GE3 SI7850DP-T1-GE3 Vishay Siliconix MOSFET N-CH 60V 6.2A PPAK SO-8
SI7850DP-T1-GE3 SI7850DP-T1-GE3 Vishay Siliconix MOSFET N-CH 60V 6.2A PPAK SO-8
SI4630DY-T1-E3 SI4630DY-T1-E3 Vishay Siliconix MOSFET N-CH 25V 40A 8-SOIC
SI4630DY-T1-E3 SI4630DY-T1-E3 Vishay Siliconix MOSFET N-CH 25V 40A 8-SOIC
SI4630DY-T1-E3 SI4630DY-T1-E3 Vishay Siliconix MOSFET N-CH 25V 40A 8-SOIC
SI7818DN-T1-E3 SI7818DN-T1-E3 Vishay Siliconix MOSFET N-CH 150V 2.2A 1212-8
SI7818DN-T1-E3 SI7818DN-T1-E3 Vishay Siliconix MOSFET N-CH 150V 2.2A 1212-8
SI7818DN-T1-E3 SI7818DN-T1-E3 Vishay Siliconix MOSFET N-CH 150V 2.2A 1212-8
SI7818DN-T1-GE3 SI7818DN-T1-GE3 Vishay Siliconix MOSFET N-CH 150V 2.2A 1212-8
SI7818DN-T1-GE3 SI7818DN-T1-GE3 Vishay Siliconix MOSFET N-CH 150V 2.2A 1212-8
SI7818DN-T1-GE3 SI7818DN-T1-GE3 Vishay Siliconix MOSFET N-CH 150V 2.2A 1212-8
SUD50N03-06AP-E3 SUD50N03-06AP-E3 Vishay Siliconix MOSFET N-CH 30V 90A TO252
SUD50N03-06AP-E3 SUD50N03-06AP-E3 Vishay Siliconix MOSFET N-CH 30V 90A TO252
SUD50N03-06AP-E3 SUD50N03-06AP-E3 Vishay Siliconix MOSFET N-CH 30V 90A TO252
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