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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
SI7460DP-T1-GE3 SI7460DP-T1-GE3 Vishay Siliconix MOSFET N-CH 60V 11A PPAK SO-8
SI7611DN-T1-GE3 SI7611DN-T1-GE3 Vishay Siliconix MOSFET P-CH 40V 18A 1212-8
SI7611DN-T1-GE3 SI7611DN-T1-GE3 Vishay Siliconix MOSFET P-CH 40V 18A 1212-8
SI7611DN-T1-GE3 SI7611DN-T1-GE3 Vishay Siliconix MOSFET P-CH 40V 18A 1212-8
SI7456CDP-T1-GE3 SI7456CDP-T1-GE3 Vishay Siliconix MOSFET N-CH 100V 27.5A PPAK SO-8
SI7456CDP-T1-GE3 SI7456CDP-T1-GE3 Vishay Siliconix MOSFET N-CH 100V 27.5A PPAK SO-8
SI7456CDP-T1-GE3 SI7456CDP-T1-GE3 Vishay Siliconix MOSFET N-CH 100V 27.5A PPAK SO-8
IRFL9110TRPBF IRFL9110TRPBF Vishay Siliconix MOSFET P-CH 100V 1.1A SOT223
IRFL9110TRPBF IRFL9110TRPBF Vishay Siliconix MOSFET P-CH 100V 1.1A SOT223
IRFL9110TRPBF IRFL9110TRPBF Vishay Siliconix MOSFET P-CH 100V 1.1A SOT223
SI4122DY-T1-GE3 SI4122DY-T1-GE3 Vishay Siliconix MOSFET N-CH 40V 27.2A 8-SOIC
SI4122DY-T1-GE3 SI4122DY-T1-GE3 Vishay Siliconix MOSFET N-CH 40V 27.2A 8-SOIC
SI4122DY-T1-GE3 SI4122DY-T1-GE3 Vishay Siliconix MOSFET N-CH 40V 27.2A 8-SOIC
SI6423DQ-T1-E3 SI6423DQ-T1-E3 Vishay Siliconix MOSFET P-CH 12V 8.2A 8-TSSOP
SI6423DQ-T1-E3 SI6423DQ-T1-E3 Vishay Siliconix MOSFET P-CH 12V 8.2A 8-TSSOP
SI6423DQ-T1-E3 SI6423DQ-T1-E3 Vishay Siliconix MOSFET P-CH 12V 8.2A 8-TSSOP
SI7461DP-T1-GE3 SI7461DP-T1-GE3 Vishay Siliconix MOSFET P-CH 60V 8.6A PPAK SO-8
SI7461DP-T1-GE3 SI7461DP-T1-GE3 Vishay Siliconix MOSFET P-CH 60V 8.6A PPAK SO-8
SI7461DP-T1-GE3 SI7461DP-T1-GE3 Vishay Siliconix MOSFET P-CH 60V 8.6A PPAK SO-8
SI4378DY-T1-E3 SI4378DY-T1-E3 Vishay Siliconix MOSFET N-CH 20V 19A 8-SOIC
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