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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
SI4866DY-T1-E3 SI4866DY-T1-E3 Vishay Siliconix MOSFET N-CH 12V 11A 8-SOIC
SI4866DY-T1-E3 SI4866DY-T1-E3 Vishay Siliconix MOSFET N-CH 12V 11A 8-SOIC
IRF510PBF IRF510PBF Vishay Siliconix MOSFET N-CH 100V 5.6A TO-220AB
SI4456DY-T1-E3 SI4456DY-T1-E3 Vishay Siliconix MOSFET N-CH 40V 33A 8-SOIC
SI4456DY-T1-E3 SI4456DY-T1-E3 Vishay Siliconix MOSFET N-CH 40V 33A 8-SOIC
SI4456DY-T1-E3 SI4456DY-T1-E3 Vishay Siliconix MOSFET N-CH 40V 33A 8-SOIC
SI7866ADP-T1-E3 SI7866ADP-T1-E3 Vishay Siliconix MOSFET N-CH 20V 40A PPAK SO-8
SI7866ADP-T1-E3 SI7866ADP-T1-E3 Vishay Siliconix MOSFET N-CH 20V 40A PPAK SO-8
SI7866ADP-T1-E3 SI7866ADP-T1-E3 Vishay Siliconix MOSFET N-CH 20V 40A PPAK SO-8
SI7178DP-T1-GE3 SI7178DP-T1-GE3 Vishay Siliconix MOSFET N-CH 100V 60A PPAK SO-8
SI7178DP-T1-GE3 SI7178DP-T1-GE3 Vishay Siliconix MOSFET N-CH 100V 60A PPAK SO-8
SI7178DP-T1-GE3 SI7178DP-T1-GE3 Vishay Siliconix MOSFET N-CH 100V 60A PPAK SO-8
SI7137DP-T1-GE3 SI7137DP-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 60A PPAK SO-8
SI7137DP-T1-GE3 SI7137DP-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 60A PPAK SO-8
SI7137DP-T1-GE3 SI7137DP-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 60A PPAK SO-8
IRLD024PBF IRLD024PBF Vishay Siliconix MOSFET N-CH 60V 2.5A 4-DIP
SI7469DP-T1-GE3 SI7469DP-T1-GE3 Vishay Siliconix MOSFET P-CH 80V 28A PPAK SO-8
SI7469DP-T1-GE3 SI7469DP-T1-GE3 Vishay Siliconix MOSFET P-CH 80V 28A PPAK SO-8
SI7469DP-T1-GE3 SI7469DP-T1-GE3 Vishay Siliconix MOSFET P-CH 80V 28A PPAK SO-8
SI7164DP-T1-GE3 SI7164DP-T1-GE3 Vishay Siliconix MOSFET N-CH 60V 60A PPAK SO-8
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