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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
SI7172DP-T1-GE3 SI7172DP-T1-GE3 Vishay Siliconix MOSFET N-CH 200V 25A PPAK SO-8
SI7172DP-T1-GE3 SI7172DP-T1-GE3 Vishay Siliconix MOSFET N-CH 200V 25A PPAK SO-8
SI4838DY-T1-E3 SI4838DY-T1-E3 Vishay Siliconix MOSFET N-CH 12V 17A 8-SOIC
SI4838DY-T1-E3 SI4838DY-T1-E3 Vishay Siliconix MOSFET N-CH 12V 17A 8-SOIC
SI4838DY-T1-E3 SI4838DY-T1-E3 Vishay Siliconix MOSFET N-CH 12V 17A 8-SOIC
SI7113DN-T1-E3 SI7113DN-T1-E3 Vishay Siliconix MOSFET P-CH 100V 13.2A 1212-8
SI7113DN-T1-E3 SI7113DN-T1-E3 Vishay Siliconix MOSFET P-CH 100V 13.2A 1212-8
SI7113DN-T1-E3 SI7113DN-T1-E3 Vishay Siliconix MOSFET P-CH 100V 13.2A 1212-8
SIR826DP-T1-GE3 SIR826DP-T1-GE3 Vishay Siliconix MOSFET N-CH 80V 60A PPAK SO-8
SIR826DP-T1-GE3 SIR826DP-T1-GE3 Vishay Siliconix MOSFET N-CH 80V 60A PPAK SO-8
SIR826DP-T1-GE3 SIR826DP-T1-GE3 Vishay Siliconix MOSFET N-CH 80V 60A PPAK SO-8
SI3440DV-T1-E3 SI3440DV-T1-E3 Vishay Siliconix MOSFET N-CH 150V 1.2A 6-TSOP
SI3440DV-T1-E3 SI3440DV-T1-E3 Vishay Siliconix MOSFET N-CH 150V 1.2A 6-TSOP
SI3440DV-T1-E3 SI3440DV-T1-E3 Vishay Siliconix MOSFET N-CH 150V 1.2A 6-TSOP
SI7635DP-T1-GE3 SI7635DP-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 40A PPAK SO-8
SI7635DP-T1-GE3 SI7635DP-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 40A PPAK SO-8
SI7635DP-T1-GE3 SI7635DP-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 40A PPAK SO-8
SI7852ADP-T1-E3 SI7852ADP-T1-E3 Vishay Siliconix MOSFET N-CH 80V 30A PPAK SO-8
SI7852ADP-T1-E3 SI7852ADP-T1-E3 Vishay Siliconix MOSFET N-CH 80V 30A PPAK SO-8
SI7852ADP-T1-E3 SI7852ADP-T1-E3 Vishay Siliconix MOSFET N-CH 80V 30A PPAK SO-8
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