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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
SI2365EDS-T1-GE3 SI2365EDS-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 5.9A TO-236
SI2365EDS-T1-GE3 SI2365EDS-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 5.9A TO-236
SI2371EDS-T1-GE3 SI2371EDS-T1-GE3 Vishay Siliconix MOSFET P-CH 30V 4.8A SOT-23
SI2371EDS-T1-GE3 SI2371EDS-T1-GE3 Vishay Siliconix MOSFET P-CH 30V 4.8A SOT-23
SI2371EDS-T1-GE3 SI2371EDS-T1-GE3 Vishay Siliconix MOSFET P-CH 30V 4.8A SOT-23
SI2304BDS-T1-GE3 SI2304BDS-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 2.6A SOT23-3
SI2304BDS-T1-GE3 SI2304BDS-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 2.6A SOT23-3
SI2304BDS-T1-GE3 SI2304BDS-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 2.6A SOT23-3
TP0610K-T1-GE3 TP0610K-T1-GE3 Vishay Siliconix MOSFET P-CH 60V 185MA TO-236
TP0610K-T1-GE3 TP0610K-T1-GE3 Vishay Siliconix MOSFET P-CH 60V 185MA TO-236
TP0610K-T1-GE3 TP0610K-T1-GE3 Vishay Siliconix MOSFET P-CH 60V 185MA TO-236
SI2304BDS-T1-E3 SI2304BDS-T1-E3 Vishay Siliconix MOSFET N-CH 30V 2.6A SOT23-3
SI2304BDS-T1-E3 SI2304BDS-T1-E3 Vishay Siliconix MOSFET N-CH 30V 2.6A SOT23-3
SI2304BDS-T1-E3 SI2304BDS-T1-E3 Vishay Siliconix MOSFET N-CH 30V 2.6A SOT23-3
SI3456DDV-T1-GE3 SI3456DDV-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 6.3A 6-TSOP
SI3456DDV-T1-GE3 SI3456DDV-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 6.3A 6-TSOP
SI3456DDV-T1-GE3 SI3456DDV-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 6.3A 6-TSOP
SI1012X-T1-GE3 SI1012X-T1-GE3 Vishay Siliconix MOSFET N-CH 20V 500MA SC89-3
SI1012X-T1-GE3 SI1012X-T1-GE3 Vishay Siliconix MOSFET N-CH 20V 500MA SC89-3
SI1012X-T1-GE3 SI1012X-T1-GE3 Vishay Siliconix MOSFET N-CH 20V 500MA SC89-3
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