中电网首页

产品索引  > 分立半导体产品 > FET - 单

厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
1... 922923924925926927928929930931932 1054
PDF 缩略图 器件名称 制造商 描述
SI8466EDB-T2-E1 SI8466EDB-T2-E1 Vishay Siliconix MOSFET N-CH 8V 3.6A MICROFOOT
SIB410DK-T1-GE3 SIB410DK-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 9A 8SO
SIB410DK-T1-GE3 SIB410DK-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 9A 8SO
SIB410DK-T1-GE3 SIB410DK-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 9A 8SO
SI1469DH-T1-E3 SI1469DH-T1-E3 Vishay Siliconix MOSFET P-CH 20V 2.7A SC70-6
SI1469DH-T1-E3 SI1469DH-T1-E3 Vishay Siliconix MOSFET P-CH 20V 2.7A SC70-6
SI1469DH-T1-E3 SI1469DH-T1-E3 Vishay Siliconix MOSFET P-CH 20V 2.7A SC70-6
SI5440DC-T1-GE3 SI5440DC-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 6A 1206-8
SI5440DC-T1-GE3 SI5440DC-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 6A 1206-8
SI5440DC-T1-GE3 SI5440DC-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 6A 1206-8
SIB406EDK-T1-GE3 SIB406EDK-T1-GE3 Vishay Siliconix MOSFET N-CH 20V 6A SC-75-6
SIB406EDK-T1-GE3 SIB406EDK-T1-GE3 Vishay Siliconix MOSFET N-CH 20V 6A SC-75-6
SIB406EDK-T1-GE3 SIB406EDK-T1-GE3 Vishay Siliconix MOSFET N-CH 20V 6A SC-75-6
SI8497DB-T2-E1 SI8497DB-T2-E1 Vishay Siliconix MOSFET P-CH 30V 13A MICROFOOT
SI8497DB-T2-E1 SI8497DB-T2-E1 Vishay Siliconix MOSFET P-CH 30V 13A MICROFOOT
SI8497DB-T2-E1 SI8497DB-T2-E1 Vishay Siliconix MOSFET P-CH 30V 13A MICROFOOT
SI8497DB-T2-E1 SI8497DB-T2-E1 Vishay Siliconix MOSFET P-CH 30V 13A MICROFOOT
SI3464DV-T1-GE3 SI3464DV-T1-GE3 Vishay Siliconix MOSFET N-CH 20V 8A 6-TSOP
SI3464DV-T1-GE3 SI3464DV-T1-GE3 Vishay Siliconix MOSFET N-CH 20V 8A 6-TSOP
SI3464DV-T1-GE3 SI3464DV-T1-GE3 Vishay Siliconix MOSFET N-CH 20V 8A 6-TSOP
1... 922923924925926927928929930931932 1054