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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
SI1302DL-T1-GE3 SI1302DL-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 600MA SC-70-3
SI1302DL-T1-GE3 SI1302DL-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 600MA SC-70-3
SI1302DL-T1-GE3 SI1302DL-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 600MA SC-70-3
SI8817DB-T2-E1 SI8817DB-T2-E1 Vishay Siliconix MOSFET P-CH 20V MICROFOOT
SI8817DB-T2-E1 SI8817DB-T2-E1 Vishay Siliconix MOSFET P-CH 20V MICROFOOT
SI8817DB-T2-E1 SI8817DB-T2-E1 Vishay Siliconix MOSFET P-CH 20V MICROFOOT
SI1400DL-T1-E3 SI1400DL-T1-E3 Vishay Siliconix MOSFET N-CH 20V 1.6A SC70-6
SI1400DL-T1-E3 SI1400DL-T1-E3 Vishay Siliconix MOSFET N-CH 20V 1.6A SC70-6
SI1400DL-T1-E3 SI1400DL-T1-E3 Vishay Siliconix MOSFET N-CH 20V 1.6A SC70-6
SIB408DK-T1-GE3 SIB408DK-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 7A PPAK SC75-6L
SIB408DK-T1-GE3 SIB408DK-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 7A PPAK SC75-6L
SIB408DK-T1-GE3 SIB408DK-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 7A PPAK SC75-6L
SIA425EDJ-T1-GE3 SIA425EDJ-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 4.5A SC-70-6
SIA425EDJ-T1-GE3 SIA425EDJ-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 4.5A SC-70-6
SIA425EDJ-T1-GE3 SIA425EDJ-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 4.5A SC-70-6
SIB488DK-T1-GE3 SIB488DK-T1-GE3 Vishay Siliconix MOSFET N-CH 12V 9A SC75-6
SIB488DK-T1-GE3 SIB488DK-T1-GE3 Vishay Siliconix MOSFET N-CH 12V 9A SC75-6
SIB488DK-T1-GE3 SIB488DK-T1-GE3 Vishay Siliconix MOSFET N-CH 12V 9A SC75-6
SI8466EDB-T2-E1 SI8466EDB-T2-E1 Vishay Siliconix MOSFET N-CH 8V 3.6A MICROFOOT
SI8466EDB-T2-E1 SI8466EDB-T2-E1 Vishay Siliconix MOSFET N-CH 8V 3.6A MICROFOOT
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