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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
2N7002K-T1-E3 2N7002K-T1-E3 Vishay Siliconix MOSFET N-CH 60V 300MA SOT-23
2N7002K-T1-E3 2N7002K-T1-E3 Vishay Siliconix MOSFET N-CH 60V 300MA SOT-23
SIR492DP-T1-GE3 SIR492DP-T1-GE3 Vishay Siliconix MOSFET N-CH 12V 40A PPAK SO-8
SIR492DP-T1-GE3 SIR492DP-T1-GE3 Vishay Siliconix MOSFET N-CH 12V 40A PPAK SO-8
SIR492DP-T1-GE3 SIR492DP-T1-GE3 Vishay Siliconix MOSFET N-CH 12V 40A PPAK SO-8
SISA14DN-T1-GE3 SISA14DN-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 20A 1212-8
SISA14DN-T1-GE3 SISA14DN-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 20A 1212-8
SISA14DN-T1-GE3 SISA14DN-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 20A 1212-8
SI3493BDV-T1-GE3 SI3493BDV-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 8A 6-TSOP
SI3493BDV-T1-GE3 SI3493BDV-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 8A 6-TSOP
SI3493BDV-T1-GE3 SI3493BDV-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 8A 6-TSOP
SI4488DY-T1-GE3 SI4488DY-T1-GE3 Vishay Siliconix MOSFET N-CH 150V 3.5A 8-SOIC
SI4488DY-T1-GE3 SI4488DY-T1-GE3 Vishay Siliconix MOSFET N-CH 150V 3.5A 8-SOIC
SI4488DY-T1-GE3 SI4488DY-T1-GE3 Vishay Siliconix MOSFET N-CH 150V 3.5A 8-SOIC
SIA453EDJ-T1-GE3 SIA453EDJ-T1-GE3 Vishay Siliconix MOSFET P-CH 30V 24A PPAK SC-70-6
IRFR220PBF IRFR220PBF Vishay Siliconix MOSFET N-CH 200V 4.8A DPAK
2N7002K-T1-E3 2N7002K-T1-E3 Vishay Siliconix MOSFET N-CH 60V 300MA SOT-23
2N7002K-T1-E3 2N7002K-T1-E3 Vishay Siliconix MOSFET N-CH 60V 300MA SOT-23
2N7002K-T1-E3 2N7002K-T1-E3 Vishay Siliconix MOSFET N-CH 60V 300MA SOT-23
SIS435DNT-T1-GE3 SIS435DNT-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 30A 1212-8
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