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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
IRFS11N50ATRRP IRFS11N50ATRRP Vishay Siliconix MOSFET N-CH 500V 11A D2PAK
IRF840LCSTRRPBF IRF840LCSTRRPBF Vishay Siliconix MOSFET N-CH 500V 8A D2PAK
SQM120N04-1M7_GE3 SQM120N04-1M7_GE3 Vishay Siliconix MOSFET N-CH 40V 120A TO263
SI4406DY-T1-E3 SI4406DY-T1-E3 Vishay Siliconix MOSFET N-CH 30V 13A 8-SOIC
SI4406DY-T1-GE3 SI4406DY-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 13A 8-SOIC
SI4408DY-T1-GE3 SI4408DY-T1-GE3 Vishay Siliconix MOSFET N-CH 20V 14A 8-SOIC
SI4862DY-T1-E3 SI4862DY-T1-E3 Vishay Siliconix MOSFET N-CH 16V 17A 8-SOIC
SI4862DY-T1-GE3 SI4862DY-T1-GE3 Vishay Siliconix MOSFET N-CH 16V 17A 8-SOIC
SI7668ADP-T1-E3 SI7668ADP-T1-E3 Vishay Siliconix MOSFET N-CH 30V 40A PPAK SO-8
SI7668ADP-T1-GE3 SI7668ADP-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 40A PPAK SO-8
IRL530 IRL530 Vishay Siliconix MOSFET N-CH 100V 15A TO-220AB
SIHP23N60E-GE3 SIHP23N60E-GE3 Vishay Siliconix MOSFET N-CH 600V 23A TO-220AB
IRFBC30ASTRLPBF IRFBC30ASTRLPBF Vishay Siliconix MOSFET N-CH 600V 3.6A D2PAK
IRFBC30ASTRRPBF IRFBC30ASTRRPBF Vishay Siliconix MOSFET N-CH 600V 3.6A D2PAK
IRFBC30STRLPBF IRFBC30STRLPBF Vishay Siliconix MOSFET N-CH 600V 3.6A D2PAK
SIE812DF-T1-E3 SIE812DF-T1-E3 Vishay Siliconix MOSFET N-CH 40V 60A 10-POLARPAK
SIE812DF-T1-E3 SIE812DF-T1-E3 Vishay Siliconix MOSFET N-CH 40V 60A 10-POLARPAK
SIE812DF-T1-E3 SIE812DF-T1-E3 Vishay Siliconix MOSFET N-CH 40V 60A 10-POLARPAK
SIE810DF-T1-GE3 SIE810DF-T1-GE3 Vishay Siliconix MOSFET N-CH 20V 60A POLARPAK
SIE812DF-T1-GE3 SIE812DF-T1-GE3 Vishay Siliconix MOSFET N-CH 40V 60A POLARPAK
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