中电网首页

产品索引  > 分立半导体产品 > FET - 单

厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
1... 976977978979980981982983984985986 1054
PDF 缩略图 器件名称 制造商 描述
IRFD310 IRFD310 Vishay Siliconix MOSFET N-CH 400V 350MA 4-DIP
SI4838DY-T1-GE3 SI4838DY-T1-GE3 Vishay Siliconix MOSFET N-CH 12V 17A 8-SOIC
SUD40N10-25-T4-E3 SUD40N10-25-T4-E3 Vishay Siliconix MOSFET N-CH 100V 40A TO252
IRL520 IRL520 Vishay Siliconix MOSFET N-CH 100V 9.2A TO-220AB
IRFZ14 IRFZ14 Vishay Siliconix MOSFET N-CH 60V 10A TO-220AB
IRFZ10 IRFZ10 Vishay Siliconix MOSFET N-CH 60V 10A TO-220AB
SQM120N04-1M9-GE3 SQM120N04-1M9-GE3 Vishay Siliconix MOSFET N-CH 40V 120A TO263
SQM200N04-1M7L-GE3 SQM200N04-1M7L-GE3 Vishay Siliconix MOSFET N-CH 40V 200A TO-263
SQM40N10-30-GE3 SQM40N10-30-GE3 Vishay Siliconix MOSFET N-CH 100V 40A TO263
SI4442DY-T1-GE3 SI4442DY-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 15A 8-SOIC
IRF9Z34STRRPBF IRF9Z34STRRPBF Vishay Siliconix MOSFET P-CH 60V 18A D2PAK
SI7374DP-T1-E3 SI7374DP-T1-E3 Vishay Siliconix MOSFET N-CH 30V 24A PPAK SO-8
SI7374DP-T1-E3 SI7374DP-T1-E3 Vishay Siliconix MOSFET N-CH 30V 24A PPAK SO-8
SI7374DP-T1-E3 SI7374DP-T1-E3 Vishay Siliconix MOSFET N-CH 30V 24A PPAK SO-8
SI4448DY-T1-GE3 SI4448DY-T1-GE3 Vishay Siliconix MOSFET N-CH 12V 50A 8-SOIC
SI7374DP-T1-GE3 SI7374DP-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 24A PPAK SO-8
SI7738DP-T1-E3 SI7738DP-T1-E3 Vishay Siliconix MOSFET N-CH 150V 30A PPAK SO-8
SUD25N15-52-T4-E3 SUD25N15-52-T4-E3 Vishay Siliconix MOSFET N-CH 150V 25A TO252
IRF610 IRF610 Vishay Siliconix MOSFET N-CH 200V 3.3A TO-220AB
IRF614 IRF614 Vishay Siliconix MOSFET N-CH 250V 2.7A TO-220AB
1... 976977978979980981982983984985986 1054