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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
IRF730SPBF IRF730SPBF Vishay Siliconix MOSFET N-CH 400V 5.5A D2PAK
IRF830LPBF IRF830LPBF Vishay Siliconix MOSFET N-CH 500V 4.5A TO-262
IRF9Z20 IRF9Z20 Vishay Siliconix MOSFET P-CH 50V 9.7A TO-220AB
IRF9Z24STRLPBF IRF9Z24STRLPBF Vishay Siliconix MOSFET P-CH 60V 11A D2PAK
IRF9Z24STRRPBF IRF9Z24STRRPBF Vishay Siliconix MOSFET P-CH 60V 11A D2PAK
IRLIZ24G IRLIZ24G Vishay Siliconix MOSFET N-CH 60V 14A TO220FP
SUD50P10-43L-GE3 SUD50P10-43L-GE3 Vishay Siliconix MOSFET P-CH 100V 37.1A TO252
IRFI720GPBF IRFI720GPBF Vishay Siliconix MOSFET N-CH 400V 2.6A TO220FP
SI4632DY-T1-E3 SI4632DY-T1-E3 Vishay Siliconix MOSFET N-CH 25V 40A 8-SOIC
SI4632DY-T1-E3 SI4632DY-T1-E3 Vishay Siliconix MOSFET N-CH 25V 40A 8-SOIC
SI4632DY-T1-E3 SI4632DY-T1-E3 Vishay Siliconix MOSFET N-CH 25V 40A 8-SOIC
SI4413ADY-T1-GE3 SI4413ADY-T1-GE3 Vishay Siliconix MOSFET P-CH 30V 10.5A 8-SOIC
SI4423DY-T1-GE3 SI4423DY-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 10A 8-SOIC
SI4438DY-T1-E3 SI4438DY-T1-E3 Vishay Siliconix MOSFET N-CH 30V 36A 8-SOIC
SI4438DY-T1-GE3 SI4438DY-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 36A 8-SOIC
SI4632DY-T1-GE3 SI4632DY-T1-GE3 Vishay Siliconix MOSFET N-CH 25V 40A 8-SOIC
SI7390DP-T1-E3 SI7390DP-T1-E3 Vishay Siliconix MOSFET N-CH 30V 9A PPAK SO-8
SI7390DP-T1-GE3 SI7390DP-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 9A PPAK SO-8
SQ4401EY-T1-GE3 SQ4401EY-T1-GE3 Vishay Siliconix MOSFET P-CH 40V 17.3A 8SOIC
IRF730ASTRLPBF IRF730ASTRLPBF Vishay Siliconix MOSFET N-CH 400V 5.5A D2PAK
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