中电网首页

产品索引  > 分立半导体产品 > FET - 单

厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
1... 967968969970971972973974975976977 1054
PDF 缩略图 器件名称 制造商 描述
SI7720DN-T1-GE3 SI7720DN-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 12A 1212-8
SI7720DN-T1-GE3 SI7720DN-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 12A 1212-8
SI7720DN-T1-GE3 SI7720DN-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 12A 1212-8
SI7384DP-T1-GE3 SI7384DP-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 11A PPAK SO-8
IRF630STRRPBF IRF630STRRPBF Vishay Siliconix MOSFET N-CH 200V 9A D2PAK
SIHD7N60E-E3 SIHD7N60E-E3 Vishay Siliconix MOSFET N-CH 600V 7A TO-252
SIR640DP-T1-GE3 SIR640DP-T1-GE3 Vishay Siliconix MOSFET N-CH 40V 60A PPAK SO-8
SIR640DP-T1-GE3 SIR640DP-T1-GE3 Vishay Siliconix MOSFET N-CH 40V 60A PPAK SO-8
SIR640DP-T1-GE3 SIR640DP-T1-GE3 Vishay Siliconix MOSFET N-CH 40V 60A PPAK SO-8
IRF610STRLPBF IRF610STRLPBF Vishay Siliconix MOSFET N-CH 200V 3.3A D2PAK
IRF610STRRPBF IRF610STRRPBF Vishay Siliconix MOSFET N-CH 200V 3.3A D2PAK
IRF614STRRPBF IRF614STRRPBF Vishay Siliconix MOSFET N-CH 250V 2.7A D2PAK
IRF530STRRPBF IRF530STRRPBF Vishay Siliconix MOSFET N-CH 100V 14A D2PAK
IRF530STRRPBF IRF530STRRPBF Vishay Siliconix MOSFET N-CH 100V 14A D2PAK
IRF530STRRPBF IRF530STRRPBF Vishay Siliconix MOSFET N-CH 100V 14A D2PAK
SUP50N10-21P-GE3 SUP50N10-21P-GE3 Vishay Siliconix MOSFET N-CH 100V 50A TO220AB
IRF9Z14STRLPBF IRF9Z14STRLPBF Vishay Siliconix MOSFET P-CH 60V 6.7A D2PAK
SIHU7N60E-E3 SIHU7N60E-E3 Vishay Siliconix MOSFET N-CH 600V 7A TO-251
SI4124DY-T1-E3 SI4124DY-T1-E3 Vishay Siliconix MOSFET N-CH 40V 20.5A 8-SOIC
SI4455DY-T1-E3 SI4455DY-T1-E3 Vishay Siliconix MOSFET P-CH 150V 2.8A 8-SOIC
1... 967968969970971972973974975976977 1054