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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
SIHU6N62E-GE3 SIHU6N62E-GE3 Vishay Siliconix MOSFET N-CH 620V 6A TO-251
SI4630DY-T1-GE3 SI4630DY-T1-GE3 Vishay Siliconix MOSFET N-CH 25V 40A 8-SOIC
SI4630DY-T1-GE3 SI4630DY-T1-GE3 Vishay Siliconix MOSFET N-CH 25V 40A 8-SOIC
SI4630DY-T1-GE3 SI4630DY-T1-GE3 Vishay Siliconix MOSFET N-CH 25V 40A 8-SOIC
SI4384DY-T1-GE3 SI4384DY-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 10A 8-SOIC
IRFU020PBF IRFU020PBF Vishay Siliconix MOSFET N-CH 60V 14A I-PAK
IRFU9214PBF IRFU9214PBF Vishay Siliconix MOSFET P-CH 250V 2.7A I-PAK
IRFR224TRLPBF IRFR224TRLPBF Vishay Siliconix MOSFET N-CH 250V 3.8A DPAK
IRFR1N60ATRLPBF IRFR1N60ATRLPBF Vishay Siliconix MOSFET N-CH 600V 1.4A DPAK
IRFR1N60ATRRPBF IRFR1N60ATRRPBF Vishay Siliconix MOSFET N-CH 600V 1.4A DPAK
IRFR420ATRLPBF IRFR420ATRLPBF Vishay Siliconix MOSFET N-CH 500V 3.3A DPAK
IRFR420ATRPBF IRFR420ATRPBF Vishay Siliconix MOSFET N-CH 500V 3.3A DPAK
IRFR9214TRLPBF IRFR9214TRLPBF Vishay Siliconix MOSFET P-CH 250V 2.7A DPAK
SUD50N03-06AP-T4E3 SUD50N03-06AP-T4E3 Vishay Siliconix MOSFET N-CH 30V 90A TO252
SQD23N06-31L-GE3 SQD23N06-31L-GE3 Vishay Siliconix MOSFET N-CH 60V 23A TO252
SQD97N06-6M3L_GE3 SQD97N06-6M3L_GE3 Vishay Siliconix MOSFET N-CH 60V 50A TO252
IRF614PBF IRF614PBF Vishay Siliconix MOSFET N-CH 250V 2.7A TO-220AB
IRFR9310TRLPBF IRFR9310TRLPBF Vishay Siliconix MOSFET P-CH 400V 1.8A DPAK
SI7686DP-T1-GE3 SI7686DP-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 35A PPAK SO-8
IRFR9310TRRPBF IRFR9310TRRPBF Vishay Siliconix MOSFET P-CH 400V 1.8A DPAK
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