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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
IRLU110PBF IRLU110PBF Vishay Siliconix MOSFET N-CH 100V 4.3A I-PAK
IRFR9010TRLPBF IRFR9010TRLPBF Vishay Siliconix MOSFET P-CH 50V 5.3A DPAK
IRFR9014TRLPBF IRFR9014TRLPBF Vishay Siliconix MOSFET P-CH 60V 5.1A DPAK
SI4426DY-T1-E3 SI4426DY-T1-E3 Vishay Siliconix MOSFET N-CH 20V 6.5A 8-SOIC
SI4426DY-T1-GE3 SI4426DY-T1-GE3 Vishay Siliconix MOSFET N-CH 20V 6.5A 8-SOIC
IRFR310TRRPBF IRFR310TRRPBF Vishay Siliconix MOSFET N-CH 400V 1.7A DPAK
IRFR310TRLPBF IRFR310TRLPBF Vishay Siliconix MOSFET N-CH 400V 1.7A DPAK
SQ2361EES-T1-GE3 SQ2361EES-T1-GE3 Vishay Siliconix MOSFET P-CH 60V 2.5A SOT23
SQ2361EES-T1-GE3 SQ2361EES-T1-GE3 Vishay Siliconix MOSFET P-CH 60V 2.5A SOT23
SQ2361EES-T1-GE3 SQ2361EES-T1-GE3 Vishay Siliconix MOSFET P-CH 60V 2.5A SOT23
SI1417EDH-T1-E3 SI1417EDH-T1-E3 Vishay Siliconix MOSFET P-CH 12V 2.7A SC70-6
SI1417EDH-T1-E3 SI1417EDH-T1-E3 Vishay Siliconix MOSFET P-CH 12V 2.7A SC70-6
SI1417EDH-T1-E3 SI1417EDH-T1-E3 Vishay Siliconix MOSFET P-CH 12V 2.7A SC70-6
SI4430BDY-T1-GE3 SI4430BDY-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 14A 8-SOIC
SI4430BDY-T1-GE3 SI4430BDY-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 14A 8-SOIC
SI4430BDY-T1-GE3 SI4430BDY-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 14A 8-SOIC
SI4686DY-T1-GE3 SI4686DY-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 18.2A 8-SOIC
SI4686DY-T1-GE3 SI4686DY-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 18.2A 8-SOIC
SI4686DY-T1-GE3 SI4686DY-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 18.2A 8-SOIC
IRFR220TRRPBF IRFR220TRRPBF Vishay Siliconix MOSFET N-CH 200V 4.8A DPAK
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