中电网首页

产品索引  > 分立半导体产品 > FET - 单

厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
1... 959960961962963964965966967968969 1054
PDF 缩略图 器件名称 制造商 描述
SI4463BDY-T1-GE3 SI4463BDY-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 9.8A 8SOIC
SI5443DC-T1-E3 SI5443DC-T1-E3 Vishay Siliconix MOSFET P-CH 20V 3.6A 1206-8
SI5443DC-T1-GE3 SI5443DC-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 3.6A 1206-8
SIR406DP-T1-GE3 SIR406DP-T1-GE3 Vishay Siliconix MOSFET N-CH 25V 40A PPAK SO-8
SIR418DP-T1-GE3 SIR418DP-T1-GE3 Vishay Siliconix MOSFET N-CH 40V 40A PPAK SO-8
IRFU220PBF IRFU220PBF Vishay Siliconix MOSFET N-CH 200V 4.8A I-PAK
IRFD214PBF IRFD214PBF Vishay Siliconix MOSFET N-CH 250V 450MA 4-DIP
IRFR110TRLPBF IRFR110TRLPBF Vishay Siliconix MOSFET N-CH 100V 4.3A DPAK
IRFR110TRRPBF IRFR110TRRPBF Vishay Siliconix MOSFET N-CH 100V 4.3A DPAK
IRFR210TRRPBF IRFR210TRRPBF Vishay Siliconix MOSFET N-CH 200V 2.6A DPAK
SI8413DB-T1-E1 SI8413DB-T1-E1 Vishay Siliconix MOSFET P-CH 20V 4.8A 2X2 4-MFP
SI8413DB-T1-E1 SI8413DB-T1-E1 Vishay Siliconix MOSFET P-CH 20V 4.8A 2X2 4-MFP
SI8413DB-T1-E1 SI8413DB-T1-E1 Vishay Siliconix MOSFET P-CH 20V 4.8A 2X2 4-MFP
SI8441DB-T2-E1 SI8441DB-T2-E1 Vishay Siliconix MOSFET P-CH 20V 10.5A 2X2 6MFP
SI9407BDY-T1-E3 SI9407BDY-T1-E3 Vishay Siliconix MOSFET P-CH 60V 4.7A 8-SOIC
SQ4410EY-T1-GE3 SQ4410EY-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 15A 8SOIC
SUD23N06-31-T4-GE3 SUD23N06-31-T4-GE3 Vishay Siliconix MOSFET N-CH 60V 21.4A TO252
SQJ422EP-T1-GE3 SQJ422EP-T1-GE3 Vishay Siliconix MOSFET N-CH 40V 75A PPAK SO-8
IRFR214PBF IRFR214PBF Vishay Siliconix MOSFET N-CH 250V 2.2A DPAK
IRFR214TRRPBF IRFR214TRRPBF Vishay Siliconix MOSFET N-CH 250V 2.2A DPAK
1... 959960961962963964965966967968969 1054