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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
SI4134DY-T1-E3 SI4134DY-T1-E3 Vishay Siliconix MOSFET N-CH 30V 14A 8-SOIC
SI4403CDY-T1-GE3 SI4403CDY-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 13.4A 8SOIC
SI4712DY-T1-GE3 SI4712DY-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 14.6A 8SOIC
SI2314EDS-T1-GE3 SI2314EDS-T1-GE3 Vishay Siliconix MOSFET N-CH 20V 3.77A SOT23-3
SI7326DN-T1-E3 SI7326DN-T1-E3 Vishay Siliconix MOSFET N-CH 30V 6.5A PPAK 1212-8
SI7326DN-T1-GE3 SI7326DN-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 6.5A PPAK 1212-8
TN2404K-T1-GE3 TN2404K-T1-GE3 Vishay Siliconix MOSFET N-CH 240V 200MA TO236
SI4101DY-T1-GE3 SI4101DY-T1-GE3 Vishay Siliconix MOSFET P-CH 30V 25.7A 8SOIC
SI4620DY-T1-E3 SI4620DY-T1-E3 Vishay Siliconix MOSFET N-CH 30V 6A 8-SOIC
SI4620DY-T1-E3 SI4620DY-T1-E3 Vishay Siliconix MOSFET N-CH 30V 6A 8-SOIC
SI4620DY-T1-E3 SI4620DY-T1-E3 Vishay Siliconix MOSFET N-CH 30V 6A 8-SOIC
SIHU3N50D-GE3 SIHU3N50D-GE3 Vishay Siliconix MOSFET N-CH 500V 3A TO251 IPAK
SIHD3N50D-E3 SIHD3N50D-E3 Vishay Siliconix MOSFET N-CH 500V 3A TO252 DPAK
SIB417EDK-T1-GE3 SIB417EDK-T1-GE3 Vishay Siliconix MOSFET P-CH 8V 9A SC75-6
SIB417EDK-T1-GE3 SIB417EDK-T1-GE3 Vishay Siliconix MOSFET P-CH 8V 9A SC75-6
SIB417EDK-T1-GE3 SIB417EDK-T1-GE3 Vishay Siliconix MOSFET P-CH 8V 9A SC75-6
SI4346DY-T1-GE3 SI4346DY-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 5.9A 8-SOIC
SI9435BDY-T1-GE3 SI9435BDY-T1-GE3 Vishay Siliconix MOSFET P-CH 30V 4.1A 8-SOIC
SQ4431EY-T1-GE3 SQ4431EY-T1-GE3 Vishay Siliconix MOSFET P-CH 30V 10.8A 8SOIC
SI4491EDY-T1-GE3 SI4491EDY-T1-GE3 Vishay Siliconix MOSFET P-CH 30V 17.3A SO-8
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