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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
SIHG28N60EF-GE3 SIHG28N60EF-GE3 Vishay Siliconix MOSFET N-CH 600V 28A TO-247AC
SIHG33N60EF-GE3 SIHG33N60EF-GE3 Vishay Siliconix MOSFET N-CH 650V 33A TO-247AC
SIHW70N60EF-GE3 SIHW70N60EF-GE3 Vishay Siliconix MOSFET N-CH 600V 70A TO-247AD
SI1013CX-T1-GE3 SI1013CX-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 0.45A SC89-3
SI1012CR-T1-GE3 SI1012CR-T1-GE3 Vishay Siliconix MOSFET N-CH 20V 0.63A SC-75A
SI1315DL-T1-GE3 SI1315DL-T1-GE3 Vishay Siliconix MOSFET P-CH 8V 0.9A SC70-3
SI1424EDH-T1-GE3 SI1424EDH-T1-GE3 Vishay Siliconix MOSFET N-CH 20V 4A SOT-363
SI1489EDH-T1-GE3 SI1489EDH-T1-GE3 Vishay Siliconix MOSFET P-CH 8V 2A SOT-363
SI1077X-T1-GE3 SI1077X-T1-GE3 Vishay Siliconix MOSFET P-CH 20V SC89-6
SI1416EDH-T1-GE3 SI1416EDH-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 3.9A SOT-363
SIA427ADJ-T1-GE3 SIA427ADJ-T1-GE3 Vishay Siliconix MOSFET P-CH 8V 12A 6SC-70
2N7002E-T1-GE3 2N7002E-T1-GE3 Vishay Siliconix MOSFET N-CH 60V 240MA SOT23
SI1443EDH-T1-GE3 SI1443EDH-T1-GE3 Vishay Siliconix MOSFET P-CH 30V 4A SOT-363
SI8806DB-T2-E1 SI8806DB-T2-E1 Vishay Siliconix MOSFET N-CH 12V MICROFOOT
SI8806DB-T2-E1 SI8806DB-T2-E1 Vishay Siliconix MOSFET N-CH 12V MICROFOOT
SI8806DB-T2-E1 SI8806DB-T2-E1 Vishay Siliconix MOSFET N-CH 12V MICROFOOT
SI8809EDB-T2-E1 SI8809EDB-T2-E1 Vishay Siliconix MOSFET P-CH 20V 1.9A MICROFOOT
SI1031X-T1-GE3 SI1031X-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 0.155A SC-75A
SI2301BDS-T1-GE3 SI2301BDS-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 2.2A SOT23-3
SI2342DS-T1-GE3 SI2342DS-T1-GE3 Vishay Siliconix MOSFET N-CH 8V 6A SOT-23
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