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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
SI1413EDH-T1-GE3 SI1413EDH-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 2.3A SC-70-6
SI5499DC-T1-GE3 SI5499DC-T1-GE3 Vishay Siliconix MOSFET P-CH 8V 6A 1206-8
SI5499DC-T1-GE3 SI5499DC-T1-GE3 Vishay Siliconix MOSFET P-CH 8V 6A 1206-8
SI5499DC-T1-GE3 SI5499DC-T1-GE3 Vishay Siliconix MOSFET P-CH 8V 6A 1206-8
IRFL014PBF IRFL014PBF Vishay Siliconix MOSFET N-CH 60V 2.7A SOT223
SI5433BDC-T1-GE3 SI5433BDC-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 4.8A 1206-8
SI5433BDC-T1-GE3 SI5433BDC-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 4.8A 1206-8
SI5433BDC-T1-GE3 SI5433BDC-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 4.8A 1206-8
SI4104DY-T1-GE3 SI4104DY-T1-GE3 Vishay Siliconix MOSFET N-CH 100V 4.6A 8-SOIC
SI4104DY-T1-GE3 SI4104DY-T1-GE3 Vishay Siliconix MOSFET N-CH 100V 4.6A 8-SOIC
SI4104DY-T1-GE3 SI4104DY-T1-GE3 Vishay Siliconix MOSFET N-CH 100V 4.6A 8-SOIC
IRF710SPBF IRF710SPBF Vishay Siliconix MOSFET N-CH 400V 2A D2PAK
IRFI620GPBF IRFI620GPBF Vishay Siliconix MOSFET N-CH 200V 4.1A TO220FP
SI4396DY-T1-GE3 SI4396DY-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 16A 8-SOIC
SI4396DY-T1-GE3 SI4396DY-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 16A 8-SOIC
SI4396DY-T1-GE3 SI4396DY-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 16A 8-SOIC
SI7703EDN-T1-GE3 SI7703EDN-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 4.3A 1212-8 PPAK
SI7703EDN-T1-GE3 SI7703EDN-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 4.3A 1212-8 PPAK
SI7703EDN-T1-GE3 SI7703EDN-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 4.3A 1212-8 PPAK
SI4636DY-T1-GE3 SI4636DY-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 17A 8-SOIC
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