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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
SI4472DY-T1-GE3 SI4472DY-T1-GE3 Vishay Siliconix MOSFET N-CH 150V 7.7A 8-SOIC
SI4472DY-T1-GE3 SI4472DY-T1-GE3 Vishay Siliconix MOSFET N-CH 150V 7.7A 8-SOIC
SI7459DP-T1-E3 SI7459DP-T1-E3 Vishay Siliconix MOSFET P-CH 30V 13A PPAK SO-8
SI7459DP-T1-E3 SI7459DP-T1-E3 Vishay Siliconix MOSFET P-CH 30V 13A PPAK SO-8
SI7459DP-T1-E3 SI7459DP-T1-E3 Vishay Siliconix MOSFET P-CH 30V 13A PPAK SO-8
SIHB24N65E-GE3 SIHB24N65E-GE3 Vishay Siliconix MOSFET N-CH 650V 24A D2PAK
IRFBC30A IRFBC30A Vishay Siliconix MOSFET N-CH 600V 3.6A TO-220AB
SI4490DY-T1-GE3 SI4490DY-T1-GE3 Vishay Siliconix MOSFET N-CH 200V 2.85A 8-SOIC
SI4490DY-T1-GE3 SI4490DY-T1-GE3 Vishay Siliconix MOSFET N-CH 200V 2.85A 8-SOIC
SI4490DY-T1-GE3 SI4490DY-T1-GE3 Vishay Siliconix MOSFET N-CH 200V 2.85A 8-SOIC
SIHP8N50D-GE3 SIHP8N50D-GE3 Vishay Siliconix MOSFET N-CH 500V 8.7A TO220AB
SIHA12N50E-E3 SIHA12N50E-E3 Vishay Siliconix MOSFET N-CH 500V 10.5A TO-220FP
SI1300BDL-T1-GE3 SI1300BDL-T1-GE3 Vishay Siliconix MOSFET N-CH 20V 400MA SC-70-3
SI1300BDL-T1-GE3 SI1300BDL-T1-GE3 Vishay Siliconix MOSFET N-CH 20V 400MA SC-70-3
SI1300BDL-T1-GE3 SI1300BDL-T1-GE3 Vishay Siliconix MOSFET N-CH 20V 400MA SC-70-3
SI3454ADV-T1-E3 SI3454ADV-T1-E3 Vishay Siliconix MOSFET N-CH 30V 3.4A 6-TSOP
SI3454ADV-T1-E3 SI3454ADV-T1-E3 Vishay Siliconix MOSFET N-CH 30V 3.4A 6-TSOP
SI3454ADV-T1-E3 SI3454ADV-T1-E3 Vishay Siliconix MOSFET N-CH 30V 3.4A 6-TSOP
SI1413EDH-T1-GE3 SI1413EDH-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 2.3A SC-70-6
SI1413EDH-T1-GE3 SI1413EDH-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 2.3A SC-70-6
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