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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
SI4186DY-T1-GE3 SI4186DY-T1-GE3 Vishay Siliconix MOSFET N-CH 20V 35.8A 8SOIC
SI4186DY-T1-GE3 SI4186DY-T1-GE3 Vishay Siliconix MOSFET N-CH 20V 35.8A 8SOIC
SI4186DY-T1-GE3 SI4186DY-T1-GE3 Vishay Siliconix MOSFET N-CH 20V 35.8A 8SOIC
IRF830ASPBF IRF830ASPBF Vishay Siliconix MOSFET N-CH 500V 5A D2PAK
IRLZ14SPBF IRLZ14SPBF Vishay Siliconix MOSFET N-CH 60V 10A D2PAK
IRFIZ14GPBF IRFIZ14GPBF Vishay Siliconix MOSFET N-CH 60V 8A TO220FP
IRF630SPBF IRF630SPBF Vishay Siliconix MOSFET N-CH 200V 9A D2PAK
SI7784DP-T1-GE3 SI7784DP-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 35A PPAK SO-8
SI7784DP-T1-GE3 SI7784DP-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 35A PPAK SO-8
SI7784DP-T1-GE3 SI7784DP-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 35A PPAK SO-8
IRF610SPBF IRF610SPBF Vishay Siliconix MOSFET N-CH 200V 3.3A D2PAK
IRF630STRLPBF IRF630STRLPBF Vishay Siliconix MOSFET N-CH 200V 9A D2PAK
IRF630STRLPBF IRF630STRLPBF Vishay Siliconix MOSFET N-CH 200V 9A D2PAK
IRF630STRLPBF IRF630STRLPBF Vishay Siliconix MOSFET N-CH 200V 9A D2PAK
IRF840ASPBF IRF840ASPBF Vishay Siliconix MOSFET N-CH 500V 8A D2PAK
SUP90N06-6M0P-E3 SUP90N06-6M0P-E3 Vishay Siliconix MOSFET N-CH 60V 90A TO220AB
SI6467BDQ-T1-E3 SI6467BDQ-T1-E3 Vishay Siliconix MOSFET P-CH 12V 6.8A 8-TSSOP
SI6467BDQ-T1-E3 SI6467BDQ-T1-E3 Vishay Siliconix MOSFET P-CH 12V 6.8A 8-TSSOP
SI6467BDQ-T1-E3 SI6467BDQ-T1-E3 Vishay Siliconix MOSFET P-CH 12V 6.8A 8-TSSOP
SI8465DB-T2-E1 SI8465DB-T2-E1 Vishay Siliconix MOSFET P-CH 20V MICROFOOT
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