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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
SI8465DB-T2-E1 SI8465DB-T2-E1 Vishay Siliconix MOSFET P-CH 20V MICROFOOT
SI8465DB-T2-E1 SI8465DB-T2-E1 Vishay Siliconix MOSFET P-CH 20V MICROFOOT
SI8473EDB-T1-E1 SI8473EDB-T1-E1 Vishay Siliconix MOSFET P-CH 20V MICROFOOT
SI8473EDB-T1-E1 SI8473EDB-T1-E1 Vishay Siliconix MOSFET P-CH 20V MICROFOOT
SI8473EDB-T1-E1 SI8473EDB-T1-E1 Vishay Siliconix MOSFET P-CH 20V MICROFOOT
SI5913DC-T1-GE3 SI5913DC-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 4A 1206-8
SI5913DC-T1-GE3 SI5913DC-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 4A 1206-8
SI5913DC-T1-GE3 SI5913DC-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 4A 1206-8
SI3447BDV-T1-E3 SI3447BDV-T1-E3 Vishay Siliconix MOSFET P-CH 12V 4.5A 6-TSOP
SI1400DL-T1-GE3 SI1400DL-T1-GE3 Vishay Siliconix MOSFET N-CH 20V 1.6A SC-70-6
SI3447BDV-T1-E3 SI3447BDV-T1-E3 Vishay Siliconix MOSFET P-CH 12V 4.5A 6-TSOP
SI1400DL-T1-GE3 SI1400DL-T1-GE3 Vishay Siliconix MOSFET N-CH 20V 1.6A SC-70-6
SI3447BDV-T1-E3 SI3447BDV-T1-E3 Vishay Siliconix MOSFET P-CH 12V 4.5A 6-TSOP
SI1400DL-T1-GE3 SI1400DL-T1-GE3 Vishay Siliconix MOSFET N-CH 20V 1.6A SC-70-6
SI1426DH-T1-GE3 SI1426DH-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 2.8A SC-70-6
SI1469DH-T1-GE3 SI1469DH-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 2.7A SC-70-6
SI1426DH-T1-GE3 SI1426DH-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 2.8A SC-70-6
SI1469DH-T1-GE3 SI1469DH-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 2.7A SC-70-6
SI1426DH-T1-GE3 SI1426DH-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 2.8A SC-70-6
SI1469DH-T1-GE3 SI1469DH-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 2.7A SC-70-6
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