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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
IRF840ASTRLPBF IRF840ASTRLPBF Vishay Siliconix MOSFET N-CH 500V 8A D2PAK
SIHP7N60E-GE3 SIHP7N60E-GE3 Vishay Siliconix MOSFET N-CH 600V 7A TO-220AB
IRFL214PBF IRFL214PBF Vishay Siliconix MOSFET N-CH 250V 790MA SOT223
SIHF7N60E-E3 SIHF7N60E-E3 Vishay Siliconix MOSFET N-CH 600V 7A TO-220
SI5433BDC-T1-E3 SI5433BDC-T1-E3 Vishay Siliconix MOSFET P-CH 20V 4.8A 1206-8
SI5433BDC-T1-E3 SI5433BDC-T1-E3 Vishay Siliconix MOSFET P-CH 20V 4.8A 1206-8
SI5433BDC-T1-E3 SI5433BDC-T1-E3 Vishay Siliconix MOSFET P-CH 20V 4.8A 1206-8
SI6463BDQ-T1-GE3 SI6463BDQ-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 6.2A 8-TSSOP
SI6463BDQ-T1-GE3 SI6463BDQ-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 6.2A 8-TSSOP
SI7107DN-T1-E3 SI7107DN-T1-E3 Vishay Siliconix MOSFET P-CH 20V 9.8A 1212-8
SI7107DN-T1-E3 SI7107DN-T1-E3 Vishay Siliconix MOSFET P-CH 20V 9.8A 1212-8
SI7107DN-T1-E3 SI7107DN-T1-E3 Vishay Siliconix MOSFET P-CH 20V 9.8A 1212-8
SI5853DDC-T1-E3 SI5853DDC-T1-E3 Vishay Siliconix MOSFET P-CH 20V 4A 1206-8
SI5853DDC-T1-E3 SI5853DDC-T1-E3 Vishay Siliconix MOSFET P-CH 20V 4A 1206-8
SI5853DDC-T1-E3 SI5853DDC-T1-E3 Vishay Siliconix MOSFET P-CH 20V 4A 1206-8
SI3445DV-T1-E3 SI3445DV-T1-E3 Vishay Siliconix MOSFET P-CH 8V 6-TSOP
SI3445DV-T1-E3 SI3445DV-T1-E3 Vishay Siliconix MOSFET P-CH 8V 6-TSOP
SI3445DV-T1-E3 SI3445DV-T1-E3 Vishay Siliconix MOSFET P-CH 8V 6-TSOP
IRFL9014PBF IRFL9014PBF Vishay Siliconix MOSFET P-CH 60V 1.8A SOT223
SI4472DY-T1-GE3 SI4472DY-T1-GE3 Vishay Siliconix MOSFET N-CH 150V 7.7A 8-SOIC
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