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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
SI7114DN-T1-GE3 SI7114DN-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 11.7A 1212-8
SI7114DN-T1-GE3 SI7114DN-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 11.7A 1212-8
SI7114DN-T1-GE3 SI7114DN-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 11.7A 1212-8
IRFR214TRLPBF IRFR214TRLPBF Vishay Siliconix MOSFET N-CH 250V 2.2A DPAK
IRFR214TRPBF IRFR214TRPBF Vishay Siliconix MOSFET N-CH 250V 2.2A DPAK
SI7703EDN-T1-E3 SI7703EDN-T1-E3 Vishay Siliconix MOSFET P-CH 20V 4.3A 1212-8
SI7703EDN-T1-E3 SI7703EDN-T1-E3 Vishay Siliconix MOSFET P-CH 20V 4.3A 1212-8
SI7703EDN-T1-E3 SI7703EDN-T1-E3 Vishay Siliconix MOSFET P-CH 20V 4.3A 1212-8
IRF520SPBF IRF520SPBF Vishay Siliconix MOSFET N-CH 100V 9.2A D2PAK
SI6469DQ-T1-GE3 SI6469DQ-T1-GE3 Vishay Siliconix MOSFET P-CH 8V 8TSSOP
SI7230DN-T1-E3 SI7230DN-T1-E3 Vishay Siliconix MOSFET N-CH 30V 9A PPAK 1212-8
SI7230DN-T1-GE3 SI7230DN-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 9A PPAK 1212-8
SI7421DN-T1-GE3 SI7421DN-T1-GE3 Vishay Siliconix MOSFET P-CH 30V 6.4A PPAK 1212-8
SI7806ADN-T1-GE3 SI7806ADN-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 9A 1212-8
SQD19P06-60L-GE3 SQD19P06-60L-GE3 Vishay Siliconix MOSFET P-CH 60V 20A TO252
IRF830BPBF IRF830BPBF Vishay Siliconix MOSFET N-CH 500V 5.3A TO-220AB
SIHP5N50D-GE3 SIHP5N50D-GE3 Vishay Siliconix MOSFET N-CH 500V 5.3A TO220AB
IRFR010PBF IRFR010PBF Vishay Siliconix MOSFET N-CH 50V 8.2A DPAK
IRFR010TRLPBF IRFR010TRLPBF Vishay Siliconix MOSFET N-CH 50V 8.2A DPAK
IRFR010TRPBF IRFR010TRPBF Vishay Siliconix MOSFET N-CH 50V 8.2A DPAK
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