中电网首页

产品索引  > 分立半导体产品 > FET - 单

厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
1... 958959960961962963964965966967968 1054
PDF 缩略图 器件名称 制造商 描述
SI4116DY-T1-E3 SI4116DY-T1-E3 Vishay Siliconix MOSFET N-CH 25V 18A 8-SOIC
SI7405BDN-T1-E3 SI7405BDN-T1-E3 Vishay Siliconix MOSFET P-CH 12V 16A PPAK 1212-8
SI7804DN-T1-GE3 SI7804DN-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 6.5A 1212-8
SQ4850EY-T1-GE3 SQ4850EY-T1-GE3 Vishay Siliconix MOSFET N-CH 60V 12A 8SOIC
SI7463ADP-T1-GE3 SI7463ADP-T1-GE3 Vishay Siliconix MOSFET P-CH 40V 46A PPAK SO-8
SI7718DN-T1-GE3 SI7718DN-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 35A 1212-8
SI7718DN-T1-GE3 SI7718DN-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 35A 1212-8
SI7718DN-T1-GE3 SI7718DN-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 35A 1212-8
SI7634BDP-T1-E3 SI7634BDP-T1-E3 Vishay Siliconix MOSFET N-CH 30V 40A PPAK SO-8
SI4894BDY-T1-E3 SI4894BDY-T1-E3 Vishay Siliconix MOSFET N-CH 30V 8.9A 8-SOIC
SI4894BDY-T1-E3 SI4894BDY-T1-E3 Vishay Siliconix MOSFET N-CH 30V 8.9A 8-SOIC
SI4894BDY-T1-E3 SI4894BDY-T1-E3 Vishay Siliconix MOSFET N-CH 30V 8.9A 8-SOIC
SI4890BDY-T1-GE3 SI4890BDY-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 16A 8-SOIC
SI4890BDY-T1-GE3 SI4890BDY-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 16A 8-SOIC
SI4890BDY-T1-GE3 SI4890BDY-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 16A 8-SOIC
SI4638DY-T1-E3 SI4638DY-T1-E3 Vishay Siliconix MOSFET N-CH 30V 22.4A 8SOIC
SI4890BDY-T1-E3 SI4890BDY-T1-E3 Vishay Siliconix MOSFET N-CH 30V 16A 8-SOIC
SI7117DN-T1-GE3 SI7117DN-T1-GE3 Vishay Siliconix MOSFET P-CH 150V 2.17A 1212-8
SI4463BDY-T1-GE3 SI4463BDY-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 9.8A 8SOIC
SI4463BDY-T1-GE3 SI4463BDY-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 9.8A 8SOIC
1... 958959960961962963964965966967968 1054