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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
IRFR120TRLPBF IRFR120TRLPBF Vishay Siliconix MOSFET N-CH 100V 7.7A DPAK
IRFR014TRLPBF IRFR014TRLPBF Vishay Siliconix MOSFET N-CH 60V 7.7A DPAK
IRFR120TRRPBF IRFR120TRRPBF Vishay Siliconix MOSFET N-CH 100V 7.7A DPAK
SIR840DP-T1-GE3 SIR840DP-T1-GE3 Vishay Siliconix MOSFET N-CH 30V PPAK SO-8
SIR840DP-T1-GE3 SIR840DP-T1-GE3 Vishay Siliconix MOSFET N-CH 30V PPAK SO-8
SIR840DP-T1-GE3 SIR840DP-T1-GE3 Vishay Siliconix MOSFET N-CH 30V PPAK SO-8
IRFR9110TRLPBF IRFR9110TRLPBF Vishay Siliconix MOSFET P-CH 100V 3.1A DPAK
IRFR9110TRRPBF IRFR9110TRRPBF Vishay Siliconix MOSFET P-CH 100V 3.1A DPAK
SI3473DV-T1-GE3 SI3473DV-T1-GE3 Vishay Siliconix MOSFET P-CH 12V 5.9A 6-TSOP
SI7423DN-T1-GE3 SI7423DN-T1-GE3 Vishay Siliconix MOSFET P-CH 30V 7.4A PPAK 1212-8
SI8405DB-T1-E3 SI8405DB-T1-E3 Vishay Siliconix MOSFET P-CH 12V 3.6A 2X2 4-MFP
IRLU120PBF IRLU120PBF Vishay Siliconix MOSFET N-CH 100V 7.7A I-PAK
SI3460DV-T1-GE3 SI3460DV-T1-GE3 Vishay Siliconix MOSFET N-CH 20V 5.1A 6TSOP
SI4158DY-T1-GE3 SI4158DY-T1-GE3 Vishay Siliconix MOSFET N-CH 20V 36.5A 8-SOIC
SI7159DP-T1-GE3 SI7159DP-T1-GE3 Vishay Siliconix MOSFET P-CH 30V 30A PPAK SO-8
SIHD6N62E-GE3 SIHD6N62E-GE3 Vishay Siliconix MOSFET N-CH 620V 6A TO-252
SI1307DL-T1-E3 SI1307DL-T1-E3 Vishay Siliconix MOSFET P-CH 12V 0.85A SOT323-3
SI1307DL-T1-E3 SI1307DL-T1-E3 Vishay Siliconix MOSFET P-CH 12V 0.85A SOT323-3
SI1307DL-T1-E3 SI1307DL-T1-E3 Vishay Siliconix MOSFET P-CH 12V 0.85A SOT323-3
SI4455DY-T1-GE3 SI4455DY-T1-GE3 Vishay Siliconix MOSFET P-CH 150V 2A SO-8
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