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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
SI4874BDY-T1-GE3 SI4874BDY-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 12A 8-SOIC
SI6469DQ-T1-E3 SI6469DQ-T1-E3 Vishay Siliconix MOSFET P-CH 8V 8TSSOP
SI7840BDP-T1-E3 SI7840BDP-T1-E3 Vishay Siliconix MOSFET N-CH 30V 11A PPAK SO-8
SI7840BDP-T1-GE3 SI7840BDP-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 11A PPAK SO-8
SI4348DY-T1-E3 SI4348DY-T1-E3 Vishay Siliconix MOSFET N-CH 30V 8A 8-SOIC
SI4348DY-T1-E3 SI4348DY-T1-E3 Vishay Siliconix MOSFET N-CH 30V 8A 8-SOIC
SI4348DY-T1-E3 SI4348DY-T1-E3 Vishay Siliconix MOSFET N-CH 30V 8A 8-SOIC
SI6413DQ-T1-GE3 SI6413DQ-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 7.2A 8TSSOP
IRLI620GPBF IRLI620GPBF Vishay Siliconix MOSFET N-CH 200V 4A TO220FP
IRLI520GPBF IRLI520GPBF Vishay Siliconix MOSFET N-CH 100V 7.2A TO220FP
IRFD224 IRFD224 Vishay Siliconix MOSFET N-CH 250V 630MA 4-DIP
SI7110DN-T1-GE3 SI7110DN-T1-GE3 Vishay Siliconix MOSFET N-CH 20V 13.5A 1212-8
SI7110DN-T1-GE3 SI7110DN-T1-GE3 Vishay Siliconix MOSFET N-CH 20V 13.5A 1212-8
SI7110DN-T1-GE3 SI7110DN-T1-GE3 Vishay Siliconix MOSFET N-CH 20V 13.5A 1212-8
SI4626ADY-T1-E3 SI4626ADY-T1-E3 Vishay Siliconix MOSFET N-CH 30V 30A 8-SOIC
SI4626ADY-T1-GE3 SI4626ADY-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 30A 8-SOIC
SI7370ADP-T1-GE3 SI7370ADP-T1-GE3 Vishay Siliconix MOSFET N-CH 60V 50A PPAK SO-8
SUP85N03-3M6P-GE3 SUP85N03-3M6P-GE3 Vishay Siliconix MOSFET N-CH 30V 85A TO220AB
IRFD113PBF IRFD113PBF Vishay Siliconix MOSFET N-CH 60V 800MA 4-DIP
IRF820STRLPBF IRF820STRLPBF Vishay Siliconix MOSFET N-CH 500V 2.5A D2PAK
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