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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
NVMFD5853NLWFT1G NVMFD5853NLWFT1G ON Semiconductor MOSFET 2N-CH 40V 12A SO8FL
NVMFD5853NWFT1G NVMFD5853NWFT1G ON Semiconductor MOSFET 2N-CH 40V 12A SO8FL
NVDD5894NLT4G NVDD5894NLT4G ON Semiconductor MOSFET N-CH 40V 64A DPAK
NVMFD5489NLWFT1G NVMFD5489NLWFT1G ON Semiconductor MOSFET 2N-CH 60V 4.5A DFN8
NVMFD5485NLT1G NVMFD5485NLT1G ON Semiconductor MOSFET 2N-CH 60V 5.3A DFN8
NVMFD5485NLWFT1G NVMFD5485NLWFT1G ON Semiconductor MOSFET 2N-CH 60V 5.3A DFN8
NVMFD5852NLT1G NVMFD5852NLT1G ON Semiconductor MOSFET 2N-CH 40V 15A SO8FL
NVMFD5852NLWFT1G NVMFD5852NLWFT1G ON Semiconductor MOSFET 2N-CH 40V 15A SO8FL
NTMFD4901NFT3G NTMFD4901NFT3G ON Semiconductor MOSFET 2N-CH 30V 8DFN
NVMFD5873NLT1G NVMFD5873NLT1G ON Semiconductor MOSFET 2N-CH 60V 10A SO8FL
NVMFD5483NLT3G NVMFD5483NLT3G ON Semiconductor MOSFET 2N-CH 60V 6.4A 8DFN
NVMFD5873NLWFT1G NVMFD5873NLWFT1G ON Semiconductor MOSFET 2N-CH 60V 10A SO8FL
NVMFD5483NLWFT3G NVMFD5483NLWFT3G ON Semiconductor MOSFET 2N-CH 60V 6.4A 8DFN
NVMFD5483NLT1G NVMFD5483NLT1G ON Semiconductor MOSFET 2N-CH 60V 6.4A 8DFN
NVMFD5483NLWFT1G NVMFD5483NLWFT1G ON Semiconductor MOSFET 2N-CH 60V 6.4A 8DFN
NTLLD4951NFTWG NTLLD4951NFTWG ON Semiconductor MOSFET 2N-CH 30V 5.5A/6.3A WDFN8
NTMFD4C85NT3G NTMFD4C85NT3G ON Semiconductor MOSFET 2N-CH 30V 8DFN
NTMFD4C85NT1G NTMFD4C85NT1G ON Semiconductor MOSFET 2N-CH 30V 8DFN
NTMFD4C88NT3G NTMFD4C88NT3G ON Semiconductor MOSFET 2N-CH 30V 8DFN
NTMFD4C88NT1G NTMFD4C88NT1G ON Semiconductor MOSFET 2N-CH 30V 8DFN
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